Toshiharu Kubo - My portal

Profile Information

Affiliation: Associate Professor, Graduate School of Engineering Shikumi College, Nagoya Institute of Technology

Degree: 博士（工学）(慶應義塾大学)
Doctor(Engineering)(Keio University)

Researcher number: 10422338
J-GLOBAL ID: 200901037517336334
researchmap Member ID: 5000066820

External link: http://www.geocities.jp/egawa_lab/

Research Interests

electronic device

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment / Electronic device
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering / Electronic device
Nanotechnology/Materials / Applied materials /

Research History

Apr, 2018 - Present

Associate Professor, Graduate School of Engineering Shikumi College, Nagoya Institute of Technology
Apr, 2010 - Mar, 2018

Assistant Professor, Nagoya Institute of Technology
Dec, 2008 - Mar, 2010

Part-time researcher for university or other academic organization, Research Center for Integrated Quantum Electronics, Hokkaido University
Oct, 2005 - Dec, 2008

Part-time researcher for university or other academic organization, School of Engineering, The University of Tokyo

Education

Apr, 1999 - May, 2005

School of Fundamental Science and Technology, Graduate School, Division of Science and Engineering, Keio University
Apr, 1995 - Mar, 1999

Department of applied physics and physico-informatics, Faculty of Science and Engineering, Keio University

Committee Memberships

Apr, 2018 - Present

委員, 電子情報通信学会電子デバイス研究会
Apr, 2014 - Present

幹事, 応用物理学会応用電子物性分科会
Oct, 2016 - Nov, 2018

IWN2018(金沢)実行委員会・現地実行委員, 日本応用物理学会
Oct, 2016 - Nov, 2017

IWUMD2017(福岡)実行委員会・寄付/展示委員, 日本応用物理学会
Nov, 2010 - Mar, 2011

実行委員

Awards

Mar, 2017

ISPlasma2017/IC-PLANTS2017 Best Presentation Award, ISPlasma2017/IC-PLANTS2017 Committee

N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu

Papers

Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films

Toshiharu Kubo, Akira Takahashi, Makoto Miyoshi, Takashi Egawa

Applied Physics Express, 14 116503, Oct 29, 2021 Peer-reviewed
Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer

PradipDalapati, KosukeYamamoto, ToshiharuKubo, TakashiEgawa, MakotoMiyoshi

Optik, 245 167691, Jul 24, 2021 Peer-reviewed
High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure ﬁeld-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator

Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi

Journal of Vacuum Science & Technology B, 37 041205-1-041205-4, Jul 19, 2019 Peer-reviewed
Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition

Toshiharu Kubo, Takashi Egawa

Physica B, 571 210-212, Jul 18, 2019 Peer-reviewed
Trap state characterization of Al2O3/AlInGaN/GaN metal-insulator-semiconductor heterostructures

Debaleen Biswas, Naoki Torii, Hirotaka Fujita, Takahiro Yoshida, Toshiharu Kubo, Takashi Egawa

Semiconductor Science and Technology, 34 055014-1-055014-6, Apr 6, 2019 Peer-reviewed
Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces

Noriyuki Taoka, Toshiharu Kubo, Toshikazu Yamada, Takashi Egawa, Mitsuaki Shimizu

Semiconductor science and Technology, 34 025009-1-025009-7, Jan 9, 2019 Peer-reviewed
Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu

Jpn. J. Appl. Phys., 57 01AD04-1-01AD04-5, Dec 11, 2017 Peer-reviewed
Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

Toshiharu Kubo, Takashi Egawa

Semiconductor Science and Technology, 32 125016-1-125016-5, Nov 20, 2017 Peer-reviewed
Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor

Noriyuki Taoka, Toshiharu Kubo, Toshikazu Yamada, Takashi Egawa, Mitsuaki Shimizu

MICROELECTRONIC ENGINEERING, 178 182-185, Jun, 2017 Peer-reviewed
Post-deposition annealing effects on the insulator/semiconductor interfaces of Al2O3/AlGaN/GaN structures on Si substrates

T. Kubo, M. Miyoshi, T. Egawa

Semiconductor Science and Technology, 32 065012-1-065012-5, May 22, 2017 Peer-reviewed
Self-forming graphene/Ni patterns on sapphire utilizing the pattern-controlled catalyst metal agglomeration technique

Makoto Miyoshi, Yukinori Arima, Toshiharu Kubo, Takashi Egawa

APPLIED PHYSICS LETTERS, 110(1), Jan, 2017 Peer-reviewed
Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐Si

J. J. Freedsman, A. Watanabe, Y. Yamaoka, T. Kubo, T. Egawa

physica status solidi (a), 213(2) 424-428, Nov 23, 2015 Peer-reviewed
Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

Makoto Miyoshi, Masaya Mizuno, Yukinori Arima, Toshiharu Kubo, Takashi Egawa, Tetsuo Soga

Applied Physics Letters, Aug 17, 2015 Peer-reviewed
Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates (共著)

Toshiharu Kubo, Joseph J. Freedsman, Yusuke Yoshida, Takashi Egawa

Japanease Journal of Applied Physics, 54 020301-1-020301-4, Jan 21, 2015 Peer-reviewed
Normally-oﬀ AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge compensation δ-doped GaN cap layer (共著)

Akio Wakejima, Akihiro Ando, Arata Watanabe, Keita Inoue, Toshiharu Kubo, Yamato Osada, Ryuichiro Kamimura, Takashi Egawa

Applied Physics Express, 8 026502-1-026502-4, Jan 20, 2015 Peer-reviewed
Study on transfer-free graphene synthesis process utilizing spontaneous agglomeration of catalytic Ni and Co metals

Makoto Miyoshi, Masaya Mizuno, Kazuya Banno, Toshiharu Kubo, Takashi Egawa, Tetsuo Soga

MATERIALS RESEARCH EXPRESS, 2(1) 015602-1-015602-8, Jan, 2015 Peer-reviewed
Electrical properties of GaN-based metal–insulator–semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors (共著)

Toshiharu Kubo, Joseph J Freedsman, Yasuhiro Iwata, Takashi Egawa

Semiconductor Science and Technology, 29(4) 045004-1-045004-6, Feb 20, 2014 Peer-reviewed
Transfer-free graphene synthesis on insulating substrates via agglomeration phenomena of catalytic nickel films (共著)

Kazuya Banno, Masaya Mizuno, Kazuhisa Fujita, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa, Tetsuo Soga

Applied Physics Letters, 103(8) 082112-1-082112-4, Aug 21, 2013 Peer-reviewed
High drain current density E-mode Al2O3/AlGaN/GaN MOS-HEMT on Si with enhanced power device figure-of-merit ( 4 x 10^8 V^2 ohm^-1 cm^-2) (共著)

Joseph J. Freedsman, Toshiharu Kubo, Takashi Egawa

IEEE Transactions on Electron Devices, 60(10) 3079-3083, Aug 15, 2013 Peer-reviewed
Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers (共著)

Joseph J. Freedsman, Toshiharu Kubo, Takashi Egawa

Applied Physics Letters, 101 013506-1-013506-4, Jun 6, 2012 Peer-reviewed

Presentations

ALDにより成膜したSiO2/Al2O3 2層絶縁膜を用いたノーマリーオフ型AlGaN/GaN MIS-HEMTの電気特性評価

戸田圭太郎, 久保俊晴, 江川孝志

電子情報通信学会11月研究会, Nov 25, 2021, 電子情報通信学会
ALDにより成膜したSiO2/Al2O3 2層絶縁膜を用いたノーマリーオフ型AlGaN/GaN MIS-HEMTの電気特性

戸田圭太郎, 久保俊晴, 江川孝志

第82回応用物理学会秋季学術講演会, Sep 21, 2021, 日本応用物理学会
Pt/ALD-Al2O3/AlGaN/GaN MIS-HEMTの電気特性に及ぼすフォーミングガスアニールの効果Ⅲ

久保俊晴, 吉田信輝, 江川孝志

第68回応用物理学会春季学術講演会, Mar 16, 2021, 日本応用物理学会
転写フリーグラフェンの結晶性に及ぼすNi金属触媒の結晶性の効果II

高橋明空, 芝南々子, 久保俊晴, 三好実人, 江川孝志

第68回応用物理学会春季学術講演会, Mar 16, 2021, 日本応用物理学会
Estimation of Electrical Properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 Double Insulators Fabricated by ALD

Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa

ISPlasma2021, Mar 8, 2021, 日本応用物理学会
ALDにより成膜したSiO2/Al2O3 2層絶縁膜を用いたAlGaN/GaN MIS-HEMTの電気特性評価

横井駿一, 久保俊晴, 江川孝志

電子情報通信学会11月研究会, Nov 26, 2020, 電子情報通信学会
ALD により成膜したSiO2/Al2O3 2層絶縁膜を用いたAlGaN/GaN MIS-HEMT の電気特性 Ⅱ

横井駿一, 久保俊晴, 江川孝志

第81回応用物理学会秋季学術講演会, Sep 8, 2020, 日本応用物理学会
転写フリーグラフェンFET の電気特性に対するNi金属触媒の結晶性の効果

小林幹, ドルジダウガビルグーン, 高橋明空, 久保俊晴, 三好実人, 江川孝志

第67回応用物理学会春季学術講演会, Mar 12, 2020, 日本応用物理学会
ALDにより成膜したSiO2/Al2O3 2層絶縁膜を用いたAlGaN/GaN MIS-HEMTの電気特性

横井駿一, 古岡啓太, 久保俊晴, 江川孝志

第67回応用物理学会春季学術講演会, Mar 12, 2020, 日本応用物理学会
Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double-layer insulators fabricated by atomic layer deposition

Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa

ISPlasma2020, Mar 8, 2020, JSAP
Effect of crystal quality of Ni metal catalyst on electrical properties of transfer-free graphene FETs

Motoki Kobayashi, Bilguun Dorjdagva, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa

ISPlasma2020, Mar 8, 2020, JSAP
Pt/ALD-Al2O3/AlGaN/GaN MIS-HEMTの電気特性に及ぼすフォーミングガスアニールの効果Ⅱ

吉田信輝, 古岡啓太, 久保俊晴, 江川孝志

第80回応用物理学会秋季学術講演会, Sep 18, 2019, 日本応用物理学会
ALD-SiO2/AlGaN/GaN MIS-HEMTの電気特性に及ぼす成膜後熱処理の効果

横井駿一, 久保俊晴, 江川孝志

第80回応用物理学会秋季学術講演会, Sep 18, 2019, 日本応用物理学会
Al2O3/AlInGaN/GaN金属-絶縁体-半導体ヘテロ構造のトラップ状態の特性評価

藤田紘空, ビスワスディバリン, 鳥居直生, 吉田貴広, 久保俊晴, 江川孝志

第80回応用物理学会秋季学術講演会, Sep 18, 2019, 日本応用物理学会
触媒金属凝集法を用いて作製した転写フリー多層膜グラフェンの光応答特性の評価2

Dorjdagva Bilguun, 小林幹, 久保俊晴, 三好実人, 江川孝志

第80回応用物理学会秋季学術講演会, Sep 18, 2019, 日本応用物理学会
転写フリーグラェンの結晶性に及ぼすNi金属触媒の結晶性の効果

小林幹, Dorjdagva Bilguun, 久保俊晴, 三好実人, 江川孝志

第80回応用物理学会秋季学術講演会, Sep 18, 2019, 日本応用物理学会
Estimation of post-deposition annealing effects on electrical properties of ALD-SiO2/AlGaN/GaN MIS-HEMTs

S. Yokoi, T. Kubo, T. Egawa

SSDM2019, Sep 2, 2019, JSAP
Effects of forming gas annealing depending on gate electrode materials in ALD-Al2O3/AlGaN MIS-HEMT

Nobuki Yoshida, Keita Furuoka, Toshiharu Kubo, Takashi Egawa

TWHM2019, Aug 26, 2019, JSAP
Reduction in ohmic contact resistance for AlGaN-channel HFETs with a quaternary AlGaInN barrier layer

S. Saito, D. Hosomi, K. Furuoka, H. Chen, T. Kubo, T. Egawa, M. Miyoshi

TWHM2019, Aug 26, 2019, JSAP
Device characteristics and MIS interface evaluation of Al2O3/AlGaInN/AlGaN MISHFET

Saki Saito, Daiki Hosomi, Keita Furuoka, Heng Chen, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi

CSW2019, May 19, 2019, JSAP

Professional Memberships

Research Projects

Electronic states at insulator/GaN interface

The Other Research Programs, Apr, 2010 - Present
極微細金属パターン付き基板による高性能低消費電力グラフェンFETの作製

科学研究費助成事業, 基盤研究(C), 日本学術振興会, Apr, 2019 - Mar, 2022
Si基板上GaNパワーデバイスの性能を向上させるゲート構造用絶縁膜の開発

内藤科学技術振興財団助成金, 民間財団等, Jun, 2020 - Mar, 2021
極微細金属パターン付き基板を用いた高性能グラフェン FET の作製

村田財学術振興財団第35回学術助成金, 民間財団等, Apr, 2019 - Mar, 2020
低炭素社会を実現する次世代パワーエレクトロニクスプロジェクト／GaNパワーデバイス等の実用化加速技術開発

受託研究（一般受託研究）, Apr, 2017 - Mar, 2020

江川孝志
GaN-HEMTを高出力化するゲート絶縁膜プロセス開発に関する共同研究

共同研究（国内共同研究）, 株式会社アルバック, Apr, 2016 - Mar, 2017
新しいグラフェン合成プロセスの開発とエネルギー利用効率化への展開

東燃ゼネラル石油研究奨励・奨学財団研究助成, 民間財団等, Apr, 2016 - Mar, 2017
Surface properties of AlGaN layers with high Al compositions

The Other Research Programs, Dec, 2008 - Mar, 2010
Improvement of carbon compounds by fast neutron irradiation

The Other Research Programs, Oct, 2005 - Dec, 2008
Study on the electrical conductivity of Graphite

The Other Research Programs, Apr, 1998 - Oct, 2005

Industrial Property Rights

2017-20109 ゲート絶縁膜の形成方法、および、ゲート絶縁膜

座間秀昭, 小林忠正, 久保俊晴, 江川孝志
2015-212450 グラフェンデバイスおよびその製造方法

三好実人, 久保俊晴, 江川孝志