Vertical type GaAs static induction transistors (SIT) with 160 Angstrom channels were fabricated with selective regrowth, using molecular layer epitaxy. The structure with a sidewall channel is suitable for electron transport investigation with electroluminescence spectra. The room temperature spectra (below bandgap, in the range from 0.6eV to 1.4eV) indicate tunnelling as the room temperature electron transport mechanism for this device. At sufficiently high drain-source or gate-source bias voltages, most of the electrons are injected directly from the source to the drain. The electron transit time was roughly estimated as 2 x 10(-14)s.