Piotr Plotka - My portal

Profile Information

Affiliation: Senior researcher, Former Institution / Organization Semiconductor Research Foundation

Degree: Doctor (Engineering)(Technical University of Gdansk (Poland))

J-GLOBAL ID: 200901079148802991
researchmap Member ID: 5000066856

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /

Misc.

240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

Piotr Płotka, Jun-Ichi Nishizawa, Toru Kurabayashi, Hiroki Makabe

IEEE Transactions on Electron Devices, 50(4) 867-873, Apr, 2003
240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer

IEEE Transaction on Electron Devices, 50(4) 867-873, 2003
Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl gallium

NISHIZAWA J, KURABAYASHI T, PLOTKA P, KIKUCHI H, HAMANO T

Journal of Crystal Growth, 244(3/4) 236-242, 2002
Ballistic and tunneling GaAs static induction transisters: Nano-devices for TH₂ electronics

NISHIZAWA J, PLOTKA P, KURABAYASHI T

IEEE Transactions on Electron Devices, 49(7) 1102-1111, 2002
Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl gallium

Journal of Crystal Growth, 244(3/4) 236-242, 2002
Ballistic and tunneling GaAs static induction transisters: Nano-devices for TH2 electronics

IEEE Transactions on Electron Devices, 49(7) 1102-1111, 2002
Light emission from tunnelling mode GaAs static induction transistor

J Nishizawa, P Plotka, T Kurabayashi

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 146(1) 27-30, Feb, 1999
Low resistance contacts with chemical vapor deposited tungsten on GaAs growth by molecular layer epitaxy

OYAMA Y, PLOTKA P, MATSUMOTO F, KURABAYASHI T, HAMANO T, KIKUCHI H, NISHIZAWA J

Journal of Electro chemical Society, 146(1) 131-136, 1999
Light emission from tunneling mode GaAs static induction transistor

IEE Proceedings-circuits, Devices, Systems, 146(1) 27-30, 1999
Low resistance contacts with chemical vapor deposited tungsten on GaAs growth by molecular layer epitaxy

Journal of Electro chemical Society, 146(1) 131-136, 1999
Ideal static induction transistor, implemented with molecular layer epitaxy.

PLOTKA P, KURABAYASHI T, OYAMA Y, NISHIZAWA J

Applical Surface Science, 82/83 91-96, 1994
Ideal static induction transistor, implemented with molecular layer epitaxy

Applical Surface Science, 82/83 91-96, 1994

Research Projects

GaAs semiconductor devices

1990
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