論文

査読有り
2015年3月

Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

APPLIED PHYSICS LETTERS
  • Katsuhisa Murakami
  • ,
  • Shunsuke Tanaka
  • ,
  • Ayaka Hirukawa
  • ,
  • Takaki Hiyama
  • ,
  • Tomoya Kuwajima
  • ,
  • Emi Kano
  • ,
  • Masaki Takeguchi
  • ,
  • Jun-ichi Fujita

106
9
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/1.4914114
出版者・発行元
AMER INST PHYSICS

A single layer of graphene with dimensions of 20mm x 20mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50 nm to 200 nm. (C) 2015 AIP Publishing LLC.

Web of Science ® 被引用回数 : 39

リンク情報
DOI
https://doi.org/10.1063/1.4914114
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000351069900057&DestApp=WOS_CPL
ID情報
  • DOI : 10.1063/1.4914114
  • ISSN : 0003-6951
  • eISSN : 1077-3118
  • Web of Science ID : WOS:000351069900057

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