2011年8月
Characteristics of graphene FET directly transformed from a resist pattern through interfacial graphitization of liquid gallium
MICROELECTRONIC ENGINEERING
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- ,
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- 巻
- 88
- 号
- 8
- 開始ページ
- 2524
- 終了ページ
- 2526
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.mee.2011.01.014
- 出版者・発行元
- ELSEVIER SCIENCE BV
We found that an extremely thin resist pattern on silicon dioxide can be directly transformed into a graphene field effect transistor (FET) channel via interfacial graphitization of liquid gallium. These patterned graphene FETs have p-type characteristics and a maximum conductance modulation of 22% against an applied gate voltage that ranges from -50 to +50 V at room temperature. Further reduction of the initial resist thickness improves the modulation ratio remarkably up to more than 100%, but at the same time the conductance deteriorates greatly, to less than 10(-9) S. We believe that electron scattering at the grain-domain boundaries strongly increases the resistance of the channel, leading to an apparent on-off ratio increase as if the channel was behaving as a semiconductor. (C) 2011 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.mee.2011.01.014
- ISSN : 0167-9317
- Web of Science ID : WOS:000293663400222