2017年2月
Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures
APPLIED PHYSICS LETTERS
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- 巻
- 110
- 号
- 9
- 開始ページ
- 092410(1)
- 終了ページ
- 092410(5)
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.4977838
- 出版者・発行元
- AMER INST PHYSICS
We study spin-orbit torque induced magnetization switching in devices consisting of an antiferromagnetic PtMn and ferromagnetic Co/Ni multilayer with sizes ranging from 5 mu m to 50 nm. As the size decreases, switching behavior changes from analogue-like to stepwise with several intermediate levels. The number of intermediate levels decreases with the decreasing size and finally evolves into a binary mode below a certain threshold. The results are found to be explained by a unique reversal process of this system, where ferromagnetic domains comprising a number of polycrystalline grains reverse individually and among the domains both out-of-plane and in-plane components of exchange bias vary. Published by AIP Publishing.
- リンク情報
- ID情報
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- DOI : 10.1063/1.4977838
- ISSN : 0003-6951
- eISSN : 1077-3118
- Web of Science ID : WOS:000397871600040