FUKUI Takashi

J-GLOBAL         Last updated: Mar 19, 2015 at 11:36
 
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Name
FUKUI Takashi
Affiliation
Hokkaido University
Section
Graduate School of Information Science and Technology, Division of Electronics for Informatics
Degree
Doctor of Engineering(Hokkaido University)

Research Interests

 
 

Research Areas

 
 

Academic & Professional Experience

 
1975
 - 
1991
NTT Basic Research Laboratory
 
1991
   
 
- RCIQE, Hokkaido University
 

Education

 
 
 - 
1975
Applied Physics, Faculty of Engineering, Hokkaido University
 
 
 - 
1973
Applied Physics, Engineering, Hokkaido University
 

Published Papers

 
Eiji Nakai, Muyi Chen, Masatoshi Yoshimura, Katsuhiro Tomioka and Takashi Fukui
Jpn .J. Appl. Phys.   54 015201-1-4   Jan 2015   [Refereed]
Fumiya Ishizaka, Yoshihiro Hiraya, Katsuhiro Tomioka and Takashi Fukui
J. Crystal Growth   411 71-75   Jan 2015   [Refereed]
Tomioka, Katsuhiro; Fukui Takashi
J. Phys. D: Appl. Phys.   47 364001   2014   [Refereed]
TOMIOKA Katsuhiro, FUKUI Takashi
Applied Physics Letters   104 073507-1-073507-4   2014   [Refereed]
Y. J. Hong, J.W.Yang, W. H. Lee, R. S. Ruoff, K. S. Kim, T. Fukui
Advanced Materials   25 6847-6853   Dec 2013   [Refereed]
M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
Applied Physics Letters   103 243111-1-3   Dec 2013   [Refereed]
Tomioka, Katsuhiro; Yoshimura Masatoshi; Fukui Takashi
Nano Letters   13 5822-5826   Dec 2013   [Refereed]
Indium Phosphide core-shell nanowire solar cells with wide bandgap window layer
M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
Applied Physics Express   6 052301-1-4   May 2013   [Refereed]
E. Nakai, M. Yoshimura, K. Tomioka and T. Fukui
Jpn J.Appl. Phys   52 055002-1-4   May 2013   [Refereed]
H. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui
Jpn J.Appl. Phys   52 04CH05-1-4   Apr 2013   [Refereed]
K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui
Nanotechnology   24 115304-1-6   Mar 2013   [Refereed]
Y. Masumoto, K. Goto, S. Tomimoto, P. Mohan, J. Motohisa, T. Fukui
JOURNAL OF LUMINESCENCE   133 135-137   Jan 2013   [Refereed]
Ikejiri K, Ishizaka F, Tomioka K, Fukui T
Nano letters   12(9) 4770-4774   Sep 2012   [Refereed]
Tomioka K, Yoshimura M, Fukui T
Nature   488(7410) 189-192   Aug 2012   [Refereed]
Hong YJ, Lee WH, Wu Y, Ruoff RS, Fukui T
Nano letters   12 1431-1436   Mar 2012   [Refereed]
Kim HJ, Mothohisa J, Fukui T
Nanoscale research letters   7 104   Feb 2012   [Refereed]
Fukui T, Yoshimura M, Nakai E, Tomioka K
Ambio   41 Suppl 2 119-124   2012   [Refereed]
Ikejiri K, Kitauchi Y, Tomioka K, Motohisa J, Fukui T
Nano letters   11(10) 4314-4318   Oct 2011   [Refereed]
Hong YJ, Fukui T
ACS nano   5 7576-7584   Sep 2011   [Refereed]
Tomioka K, Motohisa J, Hara S, Hiruma K, Fukui T
Nano letters   10(5) 1639-1644   May 2010   [Refereed]

Misc

 
Two-stage Kondo effect in a quantum dot at a high magnetic field
Physical Review Letters   88(12), 126803-126805    2002
Electronics Letters   34(9) 894-895   1998
Microelectronics Journal   24(8) 795-803   1993
Fractional-Layer Superlattices Grown by MOCVD
Optoelectronics   8(4) 557-562   1993
(InAs)1 (GaAs)1 Layered Crystal Grown by MOCVD
Japanese Journal of Applied Physics   23    1984

Books etc

 
Semiconductor Nanowire and Their Optical Applications
Katsuhiro Tomioka and Takashi Fukui (Part:Contributor, Chapter 3)
Springer   Jan 2012   ISBN:3642224792
Advances in III-V Semiconductor Nanowires and Nanodevices
Junichi Motohisa, Katsuhiro Tomioka, Bin Hua, Kumar S. K. Varadwaj, Shinjiroh Hara, Kenji Hiruma and Takashi Fukui (Part:Contributor, III-V Semiconductor Nanowire Light Emitting Diodes and Lasers)
Bentham Science Publisher   Nov 2011   
Quantum Wires and Dots by MOCVD(1)
Mesoscopic Physics and Electronics (Springer-verlag)   1997   

Research Grants & Projects

 
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(特別推進研究)
Project Year: 2006 - 2010    Investigator(s): Takashi FUKUI
A selective growth method for semiconductor nanowires by using electron beam lithography and metal organic vapor phase epitaxy has been established. The crystal structure and optical properties of GaAs and InP nanowires grown were characterized by...
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(基盤研究(B))
Project Year: 2004 - 2005    Investigator(s): Yoshihito AMEMIYA
In this work, we proposed a quantum-dot device that imitated the dynamics of reaction-diffusion systems. A reaction-diffusion system (RD system) is a chemical system where chemical reactions and material diffusion coexist in a nonequilibrium state...
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(基盤研究(A))
Project Year: 2003 - 2005    Investigator(s): Junichi MOTOHISA
We have established a method to fabricate two-dimensional crystals (2D-PhCs) and 2D-PhC slabs (2D-PhCs) by utilizing selective area metalorganic vapor phase epitaxial (SA-MOVPE) and investigated their optical properties. By doing SA-MOVPE growth o...
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(基盤研究(B))
Project Year: 2002 - 2003    Investigator(s): Yoshihito AMEMIYA
The purpose of this work is to propose a single-electron device that is analogous to the reaction-diffusion system, which is a chemical complex system producing various dynamic phenomena in the natural world. In this work, we proposed a method of ...
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(特別推進研究)
Project Year: 1997 - 2000    Investigator(s): Takashi FUKUI
We have developed a technique to form position-and size-controlled quantum wires (QWRs) and quantum dots (QDs) by selective area metalorganic vapor phase epitaxial (SA-MOVPE) growth. The technique is applied for the direct fabrication of single el...
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(重点領域研究, 特定領域研究(A), 重点領域研究)
Project Year: 1996 - 2000    Investigator(s): Mitsuo KAWABE
For the development of single electron devices, novel technologies of dot formation and integration are required. We have investigated from material side, such as, metal, Si and compound semiconductors and also from view point of fabrication techn...
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(基盤研究(A))
Project Year: 1996 - 1997    Investigator(s): Hideki HASEGAWA
The purpose if this rsearch is to develop the "Contactless and Non-Destructive Capacitance-Voltage (C-V) Measurement System" for characterization of a conduction type, an impurity profile and a surface state density distribution of semiconductor m...
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(一般研究(A))
Project Year: 1994 - 1995    Investigator(s): Takashi FUKUI
We have fabricated AlGaAs/GaAs quantum dot structures using selective area metalorganic vapor phase epitaxy (MOVPE). First, GaAs pyramidal structures with four-fold symmetric {011} facet side walls are formed on SiN_x masked (001) GaAs with square...
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(一般研究(C))
Project Year: 1992 - 1993    Investigator(s): Masamichi AKAZAWA
The semiconductor carrier waves and their traveling wave interactions with the electromagnetic fields in InP and GaAs layrs using the metal-insulator-semiconductor (MIS)-type carrier confinement structure were studied. Traveling wave amplifier (TW...
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(一般研究(B))
Project Year: 1992 - 1993    Investigator(s): Takashi FUKUI
GaAs and AlGaAs micro-Pyramidal Structures having four-fold symetry facets (011) were fabricated using selective area MOVPE on (001) GaAs substrates partlally masked with a SiO_2. In order to study accurate growth rate, wider mask-patterned substr...
Semiconductor Quantum nano-Structures and Single electron devices