2007年3月
Bias voltage dependence of tunnel magnetoresistance effect in CoFeB/MgO/Co2X(X = Fe, Mn)Si magnetic tunnel junctions
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
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- 巻
- 310
- 号
- 2
- 開始ページ
- 1926
- 終了ページ
- 1928
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/j.jmmm.2006.10.761
- 出版者・発行元
- ELSEVIER SCIENCE BV
Magnetic tunnel junctions ( MTJs) with structure of sub ( thermal oxidized Si)/ Ta( 10 nm)/ Py( 2 nm)/ IrMn( 10 nm)/ Co75Fe25( 2 nm)/ Ru( 0.85 nm)/ Co40Fe40B20( 5 nm)/ MgO( 2.5 nm)/ poly crystalline Co2FeSi or Co2MnSi Heusler alloys/ Ta( 7)/ Ru( 7) have been grown by magnetron sputtering method. Differential resistance ( dV/ dI) and bias voltage dependence of the TMR ratio have been investigated at 6K. The shape of TMR- V curve for the MTJ with Co2MnSi showed significant voltage dependence of the TMR ratio. (c) 2006 Elsevier B. V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.jmmm.2006.10.761
- ISSN : 0304-8853
- Web of Science ID : WOS:000247720400015