MISC

査読有り
2013年4月

Photoassisted electron emission from metal-oxide-semiconductor cathodes based on nanocrystalline silicon

JOURNAL OF APPLIED PHYSICS
  • H. Shimawaki
  • ,
  • Y. Neo
  • ,
  • H. Mimura
  • ,
  • F. Wakaya
  • ,
  • M. Takai

113
15
開始ページ
153705
終了ページ
記述言語
英語
掲載種別
DOI
10.1063/1.4801887
出版者・発行元
AMER INST PHYSICS

This paper investigates the effect of optical pulses on the electron emission properties of metal-oxide-semiconductor (MOS) cathodes based on nanocrystalline silicon (nc-Si). The emission current is enhanced by about two orders of magnitude by the irradiation of 405 nm laser light. The increase of the emission current under irradiation was proportional to incident laser power. The differential quantum efficiency of the nc-Si based MOS diode itself was estimated to be 3 x 10(-2). However, the value of the photoemission current was only 3 x 10(-7) due to the short mean free path of hot electron for Pt used as the gate electrode. We obtained a pulsed electron beam from the cathode device by a pulsed laser. The result shows that MOS type cathodes have a suitable structure for optically generating a train of short electron bunches. (C) 2013 AIP Publishing LLC

Web of Science ® 被引用回数 : 1

リンク情報
DOI
https://doi.org/10.1063/1.4801887
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000318251400024&DestApp=WOS_CPL

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