2017年7月12日
Dependence of light polarization on electron emission from gated silicon field emitter arrays
2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017
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- 開始ページ
- 286
- 終了ページ
- 287
- 記述言語
- 英語
- 掲載種別
- 研究論文（国際会議プロシーディングス）
- DOI
- 10.1109/IVNC.2017.8051648
- 出版者・発行元
- Institute of Electrical and Electronics Engineers Inc.
We report field emission properties of gated p-type silicon field emitter arrays with submicron gate aperture induced by laser pulses. Polarization dependent photoemission is observed and the current shows linear dependence on laser power. The results indicate that the current pulses from our devices are created by photo-field emission process dominantly.
- ID情報
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- DOI : 10.1109/IVNC.2017.8051648
- SCOPUS ID : 85032825169