論文

査読有り
2017年9月26日

Dependence of light polarization on electron emission from gated silicon field emitter arrays

2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017
  • Hidetaka Shimawaki
  • ,
  • Masayoshi Nagao
  • ,
  • Yoichiro Neo
  • ,
  • Hidenori Mimura
  • ,
  • Fujio Wakaya
  • ,
  • Mikio Takai

開始ページ
286
終了ページ
287
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1109/IVNC.2017.8051648
出版者・発行元
Institute of Electrical and Electronics Engineers Inc.

We report field emission properties of gated p-type silicon field emitter arrays with submicron gate aperture induced by laser pulses. Polarization dependent photoemission is observed and the current shows linear dependence on laser power. The results indicate that the current pulses from our devices are created by photo-field emission process dominantly.

リンク情報
DOI
https://doi.org/10.1109/IVNC.2017.8051648

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