吉川明彦 (Akihiko Yoshikawa) - マイポータル - researchmap

基本情報

所属: 千葉大学大学院工学研究科人工システム科学専攻千葉大学

学位: 工学博士
工学修士
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J-GLOBAL ID: 200901095243611791
researchmap会員ID: 1000010445

MISC

354

Experimental determination of strain-free Raman frequencies and deformation potentials for the E-2 high and A(1)(LO) modes in hexagonal InN

Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa

APPLIED PHYSICS LETTERS 89(17) 2006年10月
Step-flow growth of In-polar InN by molecular beam epitaxy

Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45(24-28) L730-L733 2006年7月
Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy

XQ Wang, SB Che, Y Ishitani, A Yoshikawa

JOURNAL OF APPLIED PHYSICS 99(7) 2006年4月
In situ spectroscopic ellipsometry in plasma-assisted molecular beam epitaxy of InN under different surface stoichiometries

M Yoshitani, K Akasaka, Wang, X, SB Che, Y Ishitani, A Yoshikawa

JOURNAL OF APPLIED PHYSICS 99(4) 2006年2月
Fabrication and characterization of polycrystalline bulk ZnO with large grain size of ~100 ?m by the spark plasma sintering

phys. stat. sol. (c) vol.3 Issue 4 2006年
Temperature-dependent growth and characterization of N-polar InN films by molecular beam epitaxy

phys. stat. sol. (b) Vol.243 Issue 7 2006年
Towards fabrication of In-polar InN films and InN/GaN MQWs

phys. stat. sol. (c) vol.3 Issue 6 2006年
Fabrication of InN/AlInN MQWs by RF-MBE

phys. stat. sol. (b) Vol.243 Issue 7 2006年
Fabrication and characterization of 20 periods InN/InGaN MQWs

phys. stat. sol. (c) vol.3 Issue 6 2006年
Study on influence of atomic hydorogen irradiation on growth and property of N-polarity InN

phys. stat. sol. (c) vol.3 Issue 6 2006年
Conduction and valence band edge properties of hexagonal InN characterized by optical measurements

phys. stat. sol. (c) vol.3 Issue 6 2006年
Effect of GaN buffer layer on the polarity and property of ZnO epilayers on nitrided c-Al2O3 by MBE

phys. stat. sol. (c) vol.3 2006年
Temperature-dependent growth and characterization of N-polar InN films by molecular beam epitaxy

phys. stat. sol. (b) vol.243 No.7 2006年
Growth of In-polar and N-polar InN nanocolumns on GaN templates by molecular beam epitaxy

Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 3(6) 1561-1565 2006年
Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN MQWs by RF-MBE

Jpn. J. Appl. Phys. vol.45 No. 2006年
Electron transport in InN layers grown by plasma-assisted molecular beam epitaxy

J. Korean Physical Society vol.48(1) 2006年
Fine-structure N-polarity InN/InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy

SB Che, W Terashima, Y Ishitani, A Yoshikawa, T Matsuda, H Ishii, S Yoshida

APPLIED PHYSICS LETTERS 86(26) 2005年6月
Phonon lifetimes and phonon decay in InN

JW Pomeroy, M Kuball, H Lu, WJ Schaff, Wang, X, A Yoshikawa

APPLIED PHYSICS LETTERS 86(22) 2005年5月
Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy

A Yoshikawa, N Hashimoto, N Kikukawa, SB Che, Y Ishitani

APPLIED PHYSICS LETTERS 86(15) 2005年4月
Polarity dependence of In-rich InGaN and InN/InGaN MQWs”

Mat. Res. Soc. Symp. Proc. vol.892 2005年

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所属学協会

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共同研究・競争的資金等の研究課題

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