YAGUCHI Hiroyuki

J-GLOBAL         Last updated: Nov 20, 2018 at 10:15
 
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Name
YAGUCHI Hiroyuki
Affiliation
Saitama University
Section
Graduate School of Science and Engineering, Graduate School of Science and Engineering
Job title
Professor
Degree
Dr. (Engineering)(University of Tokyo), -(University of Tokyo), -(University of Tokyo)
Research funding number
50239737
ORCID ID
0000-0003-0621-3501

Research Areas

 
 

Education

 
Apr 1988
 - 
Mar 1991
Department of Applied Physics, Graduate School of Engineering, University of Tokyo
 
Apr 1986
 - 
Mar 1988
Department of Applied Physics, Graduate School of Engineering, University of Tokyo
 
 
 - 
1986
Department of Applied Physics, Faculty of Engineering, University of Tokyo
 

Awards & Honors

 
1997
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1995
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Published Papers

 
Ishii Kenichi, Yagi Shuhei, Yaguchi Hiroyuki
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   254(2)    Feb 2017   [Refereed]
Optical Characterization of Carrier Recombination Processes in GaPN by Two-Wavelength Excited Photoluminescence
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)      2016   [Refereed]
Two-Wavelength Excited Photoluminescence in 4H-SiC Substrate -Dependence on BGE Power Density-
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)      2016   [Refereed]
Osada Kazuki, Suzuki Tomoya, Yagi Shuhei, Naitoh Shunya, Shoji Yasushi, Hijikata Yasuto, Okada Yoshitaka, Yaguchi Hiroyuki
Japanese Journal of Applied Physics   54(8) 08KA04   Aug 2015   [Refereed]
Goto Daisuke, Hijikata Yasuto, Yagi Shuhei, Yaguchi Hiroyuki
Journal of Applied Physics   117(9) 095306   Mar 2015   [Refereed]

Misc

 
HIJIKATA Yasuto, YAGI Shuhei, YAGUCHI Hiroyuki
Technical report of IEICE. SDM   113(87) 91-96   Jun 2013
Further understanding of the SiC oxidization mechanism is indispensable for MOSFET using a SiC semiconductor to exceed the conventional Si-based power devices. In this report, we summarize what have been found so far about the oxidization mechanis...
土方 泰斗, 矢口 裕之, 吉田 貞史
埼玉大学工学部紀要 第一部 論文集   44 34-37   2010
To understand the structure of SiC-oxide interface more in detail, we propose a theory for calculating the depth profiles of Si and C emitted into SiC layer during oxidation. Simulations of the depth profiles of Si and C interstitials results in t...
土方 泰斗, 矢口 裕之, 吉田 貞史
埼玉大学工学部紀要 第一部 論文集   43 17-21   2009
We tried to elucidate the oxidizing interface structure of SiC semiconductor and its oxidation mechanism. First of all, we investigated the analysis method for deriving the thickness of interface layer and verified the validity of the method by an...
矢口 裕之
旭硝子財団助成研究成果報告   1-7   2008
YAGUCHI Hiroyuki
Journal of the Japanese Association of Crystal Growth   34(4) 201-206   Nov 2007
Metalorganic vapor phase epitaxy of zincblende GaN and molecular beam epitaxy of zincblende InN are presented. High quality zincblende GaN can be grown under the condition of low V/III ratio and high growth temperature. Since wurtzite GaN tends to...

Books etc

 
吉田貞史, 菊池昭彦, 松田七美男, 矢口裕之, 明連広昭, 石谷善博, 金原粲 電気数学
実教出版   2008   ISBN:978-4-40-731317-8
金原粲、吉田貞史、江馬一弘、馬場茂、矢口裕之、和田直久 基礎物理2
実教出版   2006   ISBN:978-4-40-730855-6
Handbook of Semiconductor Nanostructures and Nanodevices(Optical Gain of Variously Strained Semiconductor Quantum Wells)
Y. Seko and H. Yaguchi (Part:Contributor)
American Scientific Publishers, Los Angeles   2005   ISBN:978-1-58-883073-9
III-Nitride Semiconductors: Optical Properties II (Chapter 9 Cubic Phase GaN and AlGaN: Epitaxial Growth and Optical Properties)
J. Wu, H. Yaguchi, and K. Onabe (Part:Contributor)
Taylor & Francis Books, Inc.   2002   ISBN:978-1-56032-973-2

Conference Activities & Talks

 
Photoreflectance study of GaAs/GaAsP strained-barrier quantum well structures
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials   1992   
MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials   1993   
Characterization of Interface Roughness in Ge/SiGe Heterostructures Using Photoreflectance Spectroscopy
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials   1993   
Photoreflectance and Photoluminescence Study of Direct- and Indirect-Gap Band Lineups of GaAsP/GaP Strained Quantum Wells
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials   1994   
The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials   1995   

Research Grants & Projects

 
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