YOSHIDA Toyonobu

J-GLOBAL         Last updated: Jan 28, 2009 at 00:00
 
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Name
YOSHIDA Toyonobu
Affiliation
The University of Tokyo
Section
The Graduate School of Engineering, Department of Materials Engineering
Job title
professor
Degree
Dr.Eng.(The University of Tokyo)

Research Areas

 
 

Academic & Professional Experience

 
1977
 - 
1982
The University of Tokyo, Research Associate
 
1982
 - 
1984
The University of Tokyo, Assistant Professor
 
1984
 - 
1989
The University of Tokyo, Associate Professor
 
1989
   
 
- The University of Tokyo, Professor
 

Education

 
 
 - 
1977
Graduate School, Division of Engineering, The University of Tokyo
 
 
 - 
1972
Faculty of Engineering, The University of Tokyo
 

Committee Memberships

 
1990
 - 
1996
JSPS-153 Committee on Plasma Materials Science  Chairman
 
1997
 - 
1998
IUPAC Subcommittee on Plasma Chemistry  Chairman
 

Awards & Honors

 
1987
Paper Award (Japan Inst. of Metals).
 
1989
Achievement Award (Japan Inst. of Metals).
 
1992
Nishiyama Memorial Award (Iron and Steel Institute of Japan)
 
1994
Environment Award (The Nikkan Kogyo Shinbun, Ltd. & Environment Agency )
 
1995
Distinguished Lecture Series in 1995(Minnesota University
 

Misc

 
J. Appl. Phys.   48(6) 2252-2260   1977
High rates thermal plasma CVD of SiC(jointly worked)
Adv. Ceram. Mater.   3(4)    1988
J. Am. Ceram. Soc.   72(11) 2111-2116   1989

Books etc

 
Nano-scale processing with a scanning tunneling microscope (STM) under atmospheric or reduced pressure(jointly worked)
Elsevier Science Publishers B. V. "New Functionality Materials"   1993   

Works

 
Development of a radio-frequency plasma torch
1981
Development of a Hybrid plasma torch
1983
Development of a microwave plasma jet torch
1989
Development of Low-Pressure ICP-CVD
1993
Development of Hybrid Plasma Spraying
1990

Research Grants & Projects

 
Preparation of cBN Films by Plasma CVD and Sputtering
Basic study of Plasma Spraying
Fabrication Process for TBC using Hybrid Plasma Spraying
Development of MPCVD and MPPVD and Its Application to High Rate Deposition of Si-based Materials