浅野 種正

Investigation on Characteristic Variation of Polycrystalline-Si Thin Film Transistor Using Laterally Grown Film 

Jpn. J. Appl. Phys. 2009年  

Investigation on Bistability and Fabrication of Bistable Prestressed Curved Beam 

Jpn. J. Appl. Phys. 47(6) 5291-5296 2008年  

Fabrication of Field Emitters from Organic Materials Using a Stamp Technology 

Proc. 1999 Int. Display Workshops 919 1999年  

A Micro Tactile Sensor with Capacitive-Inductive Function for Discrimination of Object Property 

Proc. SPIE, Electronics and Structures for MEMS 312 1999年  

Fabrication of Carbon-Based Field Emitters Using Stamp Technology 

Jpn. J. Appl. Phys. 38(12B) 7203-7207 1999年  

Microheater-Driven Dancing Microbubbele 

Thermal Science and Engineering 7(6) 139 1999年  

Measurement of dynamic strain during ultrasonic Au-bumping on Si chip. 

Ext. Abs. 1999 Int. Conf. Solid State Devices and Materials 596 1999年  

New SOI-CBiCMOS with merged device structure. 

Ext. Abs. 1999 Int. Conf. Solid State Devices and Materials 348 1999年  

High performance poly-Si TFT technology using controlled crystallization. 

Proc. Taiwan/Japan Joint Symposium on Purification Technology 1 1999年  

Characteristic of Schottky source/drain SOI-MOSFET depending on the barrier height of silicide contacts. 

Abs. Int. Joint Conf. Si Epitaxy and Heterostructures (]G0001[)-3 1999年  

Characteristic of Schottky source/drain SOI MOSFET. 

Proc. 1999 Int. Workshop Advanced LSI's and Devices 121 1999年  

New SOI CBiCMOS structure for high speed application. 

Proc. 1999 Int. Workshop Advanced LSI's and Devices 141 1999年  

Enahnced nucleation of a-Si solid-solid phase crytallization by imprint technology. 

Dig. Tech. Papers, 1999 Int. Workshop Active-Matrix Liquid-Crystal Displays 85 1999年  

Vertical-channel polycrystalline-Si MOSFET. 

Dig. Tech. Papers, 1999 Int. Workshop Active-Matrix Liquid-Crystal Displays 247 1999年  

Fabrication of carbon-based field emitters using a stamp technology. 

Dig. Tech. Papers, 1999 Int. Microprocess and Nanotechology Conf. 182 1999年  

A new merged BiMOS transistor in a silicon on insulator structure. 

Jpn. J. Appl. Phys. 38(4B) 2501-2505 1999年