中島 寛

Low-temperature growth of thin silicon nitride film by electron cyclotron resonance plasma irradiation 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43(1A-B) L47-L49 2004年1月  

Growth kinetics and electrical properties of ultrathin Si oxide film fabricated using Krypton-diluted oxygen plasma excited by electron cyclotron resonance 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42(10) 6496-6501 2003年10月  

Low-temperature boron gettering for improving the carrier lifetime in Fe-contaminated bifacial silicon solar cells with n(+)pp(+) back-surface-field structure 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42(9A) 5397-5404 2003年9月  

Plasma breaking of thin films into nano-sized catalysts for carbon nanotube synthesis 

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING 352(1-2) 308-313 2003年7月  

Effect of ion mass and ion energy on low-temperature deposition of polycrystalline-Si thin film on SiO2 layer by using sputtering-type electron cyclotron resonance plasma 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42(5B) L511-L513 2003年5月  

Verification of preoxidation effect on deposition of thin gate-quality silicon oxide films at low temperature by a sputtering-type ECR microwave plasma 

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 72(2-3) 128-131 2000年3月