MISC

2008年9月

Effect of fabrication conditions on crystalline of SmBCO films fabricated by TFA-MOD method

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS
  • A. Mitani
  • R. Teranishi
  • K. Yamada
  • N. Mori
  • M. Mukaida
  • T. Kiss
  • M. Inoue
  • Y. Shiohara
  • T. Izumi
  • K. Nakaoka
  • J. Matsuda
  • 全て表示

468
15-20
開始ページ
1546
終了ページ
1549
記述言語
英語
掲載種別
DOI
10.1016/j.physc.2008.05.066
出版者・発行元
ELSEVIER SCIENCE BV

Metal organic deposition using trifluoroacetates is expected as a method for YBCO coated conductors since this method can provide high Superconducting properties and is a cost-effective process with non-vacuum system. Recently, REBCO coated conductors, which has high critical properties. have attracted considerable attention. However. there are some problems to optimize fabrication conditions of REBCO films with this method. In this study, we fabricated SmBCO films by TFA-MOD method and investigated the effect of fabrication conditions on crystalline. We focused especially on a starting temperature (T-1) of inlet moisture in calcination step and 02 gas concentration in crystallization step. Flat surfaces were obtained for the calcined films at both T-1 = 300 degrees C and 350 degrees C compared with that at 200 degrees C. One possible reason for this worse morphology at T-1 = 200 degrees C might be a length of a reaction time between moisture and coated film. When moisture is supplied from low temperature for long time, water could react easily to the fluoride which is contained a lot in the coated film; as a result, more HF gas is generated from the film. The crystalline was also improved for the SmBCO films calcined at over T-1 = 300 degrees C, Furthermore, the film calcined at T-1 = 350 degrees C was crystallized under the condition that O-2 gas concentration was varied between 0.2 ppm and 1000 ppm. The degree of c-axis orientation depends on oxygen partial pressure and the highest c-axis oriented SmBCO film was obtained in the case of 10 ppm. (c) 2008 Elsevier B.V. All rights reserved.

リンク情報
DOI
https://doi.org/10.1016/j.physc.2008.05.066
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000259712900116&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.physc.2008.05.066
  • ISSN : 0921-4534
  • Web of Science ID : WOS:000259712900116

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