2013年5月
Acceptor levels due to a complex including the nitrogen-hydrogen bond in GaAsN films grown by chemical beam epitaxy
Japanese Journal of Applied Physics
- ,
- ,
- 巻
- 52
- 号
- 5
- 開始ページ
- 051001
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/JJAP.52.051001
The acceptor levels and their concentration in GaAsN films grown by the chemical beam epitaxy technique were investigated through detailed analysis of the temperature dependence of hole concentration. Two acceptor levels A1 and A2 were found, and their energy levels were fixed at 130 ± 20 and 55 ± 10 meV, respectively, from the valence band maximum. Both concentrations were on the order of 1017 cm-3 and compensated by the concentration of donor on the same order. The concentration of A1 had a linear relationship with the number of N-H bonds in films grown at the same growth temperature, while the slope decreased with growth temperature. These results strongly suggested that a complex defect including the N-H bond was the origin of the A1 acceptor level. © 2013 The Japan Society of Applied Physics.
- ID情報
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- DOI : 10.7567/JJAP.52.051001
- ISSN : 0021-4922
- ISSN : 1347-4065
- SCOPUS ID : 84880908364