ANDO Yoshinori

J-GLOBAL         Last updated: May 23, 2011 at 00:00
 
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Name
ANDO Yoshinori
Affiliation
Meijo University
Section
Faculty of Science and Technology Department of Materials Science and Engineering
Job title
Professor

Education

 
 
 - 
1969
Graduate School, Division of Engineering, Nagoya University
 
 
 - 
1964
Faculty of Engineering, Nagoya University
 

Misc

 
安藤 義則
Phys. Rev. Lettt.   92, 125502 125502/1-4   2004
安藤 義則
Chem. Phys. Lett.   (385) 161-165   2004
安藤 義則
J. Nanosci. Nanotech.   3. 1-3    2003
Carbon nanowire made of a long linear carbon chain inserted inside a multiwalled carbon nanotubes
安藤 義則
Phys. Rev. Lett.   90, 187401 187401/1-4   2003
安藤 義則
Chem. Phys. Lett.   373(3/4) 266-271   2003

Books etc

 
Carbon Nanotubes: Synthesis by Arc Discharge Technique
Encyclopedia of Nanoscience and Nanotechnology Edited by H. S. Nalwa, Amer. Sci. Publish.   2004   
Production of thick single-walled carbon nanotubes by arc discharge in hydrogen ambience
Nanonetwork Materials, edited by S. Saito et al.,AIP, CP590   2001   
Carbonaceous Products by Hydrogen Arc Discharge (共著)
The Electron-Proceedings of the International Centennial Symposium on the Electron edited by A. Kirkland and P. Brown, IOM Communication Ltd.   1998   

Works

 
"Preparation Conditions of Carbon Nanotubes", XVI Congress of the International Union of Crystallography, Beijing
1993
"Formation of Carbon Nanotubes by the Evaporation of Carbon Rod Containing Sc2O3", XVI Congress of the International Union of Crystallography, Beijing
1993
Regrowth of Carbon Nanotubes and Nanoparticles XIth International Conference on Crystal Growth
1995
Carbon Nanotubes on the Top Surface of Cathode Deposit at DC Arc-Discharge 2nd Conference of the Asian Crystallographic Association
1995
The absorption of carbon and graphite particles in the wave-lengths from UV to far infranred Proc. 29th ISAS Lunar and Planetry Symposium P56.
1996

Research Grants & Projects

 
Production of carbon nanotubes
Physical properties of carbon nanotubes
Preparation of SiC ultrafine particles