坂東 務

化学量論的なAs₂Se₃薄膜の作成条件の検討 

石川高専紀要 25,33 1993年  

The Study of the Preparation Conditions for Obtaining Itoichiometric As₂Se₃ Films 

Memoirs of Ishikawa National College of Technology 25,33 1993年  

Some Properties of Sb₂ Te_3-x Se_x for Nonvolatile Memory Based on Phase Transition 

Journal of Materials Science 26 1991年  

Effects of Preparation Condition of the Bulk and Source Temperature on the Composition of As₂Te₃Films 

Thin Solid Films 195 1991年  

Some Properties of Sb₂ Te_3-x Se_x for Nonvolatile Memory Based on Phase Transition. 

Journal of Materials Science 26 1991年  

Effects of Preparation Condition of the Bulk and Source Temperature on the Composition of As₂Te₃ Films. 

Thin Solid Films. 195 1991年  

高真空中の蒸着粒子のエネルギー制御による成膜法 

石川高専紀要 (21) 1989年  

The Preparation Method of Thin Films by Controlling the Energy of Evaporated Species 

(21) 1989年  

Photo -Induced Potential Barrier in As- Se - Ge Films 

Solid State Communications 66, 6 1988年  

As-Se-Te系非晶質半導体の過渡光電流 

石川高専紀要 20 1988年  

The Photo current Decay in Amorphous Semiconductors of (AS₂ SE₃) : Te. 

20 1988年  

Photo -Excited Effects in Impurity Doped Double Layer Chalcogenide Films 

Journal of Non -Cystalline Solids 97-98 1987年  

Photo -Excited Effects in Impurity Doped Double Layer Chalcogenide Films. 

Journal of Non -Cystalline Solids 97-98 1987年