浅見 誠治

Formation of High Quality SiC on Si(100)at 900℃ using Monomethylsilane Gas-Source MBE 

Materials Science Forum 338-342 269 2000年  

オージェ電子分光法によるSi-Ge系結晶とSi酸化膜の定量分析 

仙台電波工業高等専門学校研究紀要 (26) 9 1996年  

Quantitative analysis of Si-Ge mixed crystals and silicon oxide films by Auger electron Spectroscopy 

Research Reports of Sendai National College of Technology (26) 9 1996年  

Surface Chemistry Basis for Kinetically Self-limited Epitaxial Growth from Si₂H₆/Ge₂H₆ Mixtures 「(共著)」 

Topical Conference on the Synthesis, Analysys and Growth of Electronic Materials (AIChE National Meeting) 1994年  

Adaptive temperature program ALE of Si<D1>-X</D1>Ge<D2>X</D2>/Si heterostructures from Si<D2>2</D2>H<D2>6</D2>/Ge<D2>2</D2>H<D2>6</D2>(共著) 

Applied Surface Science 82/83 359-366 1994年  

Growth of Zns<D2>x</D2>Se<D2>1-x</D2> Layers on Zns and ZnSe Substrates by a Solid-State-Diffusion Technique 

Japanese Journal of Applied Physics 17(5) 1978年