大山英典 (Hidenori Ohyama) - マイポータル

基本情報

所属: 旧所属熊本高等専門学校情報通信エレクトロニクス工学科教授

学位: 工学博士

J-GLOBAL ID: 200901067036641245
researchmap会員ID: 1000143161

研究キーワード

研究分野

ものづくり技術（機械・電気電子・化学工学） / 電子デバイス、電子機器 /

経歴

1992年 - 1992年

大学間電子工学研究センターの客員研究員
1992年 - 1992年

IMEC(Intercemicity Micro Electronics Center) Invited Researcher

学歴

- 1983年

豊橋技術科学大学, 電気電子工学専攻
- 1983年

豊橋技術科学大学

MISC

273

Effects of high temperature electron irradiation on trench-IGBT

M Nakabayashi, H Ohyama, N Hanano, E Simoen, C Claeys, K Takakura, T Iwata, T Kudou, M Yoneoka

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 16(7) 463-467 2005年7月
Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation

K Hayama, K Takakura, H Ohyama, JM Rafi, A Mercha, E Simoen, C Claeys

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 16(7) 459-462 2005年7月
Radiation damage of SiC Schottky diodes by electron irradiation

H Ohyama, K Takakura, T Watanabe, K Nishiyama, K Shigaki, T Kudou, M Nakabayashi, S Kuboyama, S Matsuda, C Kamezawa …

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 16(7) 455-458 2005年7月
Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

K Hayama, K Takakura, H Ohyama, JM Rafi, A Mercha, E Simoen, C Claeys, A Kokkoris

IEEE TRANSACTIONS ON NUCLEAR SCIENCE 51(6) 3795-3800 2004年12月
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation

K Hayama, K Takakura, H Ohyama, A Mercha, E Simoen, C Claeys, JM Rafi, M Kokkoris

MICROELECTRONICS RELIABILITY 44(9-11) 1721-1726 2004年9月
Electron irradiation effect on thermal donors in CZ-Si

K Takakura, H Ohyama, H Murakawa, T Yoshida, JM Rafi, R Job, A Ulyashin, E Simoen, C Claeys

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 27(1-3) 133-135 2004年7月
Radiation damages of InGaAs photodiodes by high-temperature electron irradiation

H Ohyama, K Takakura, M Nakabayashi, T Hirao, S Onoda, T Kamiya, E Simoen, C Claeys, S Kuboyama, K Oka …

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 219 718-721 2004年6月
A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures

M Nakabayashi, H Ohyama, N Hanano, T Kamiya, T Hirao, K Takakura, E Simoen, C Claeys

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 219 676-679 2004年6月
Anomalous threshold voltage change by 2 MeV electron irradiation at 100 degrees C in deep submicron metal-oxide-semiconductor field-effect transistors

K Hayama, H Ohyama, E Simoen, JM Rafi, A Mercha, C Claeys

APPLIED PHYSICS LETTERS 84(16) 3088-3090 2004年4月
Study of electron-irradiated IGBTs by the DCIV method and lifetime

proceeding of the International Conference on Electrical Engineering 2004, Sapporo, July 4-8, pp.632-637 2004年
Effects of electron irradiation on SiC schottky diodes

proceeding of the International Conference on Electrical Engineering 2004, Sapporo, July 4-8 pp. 628-631 2004年
High temperature electron irradiation effects in InGaAs photodiodes

Solid State Phenomena vol. 95-96, pp. 381-386 2004年
Effect of electron irradiation on thermal donors in oxygen-doped high-resistivity FZ-Si

Solid State Phenomena vol. 95-96, pp. 53-58 2004年
Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon

K Takakura, H Ohyama, T Yoshida, H Murakawa, JM Rafi, R Job, A Ulyashin, E Simoen, C Claeys

PHYSICA B-CONDENSED MATTER 340 1022-1025 2003年12月
Induced lattice defects in InGaAs photodiodes by high-temperature electron irradiation

H Ohyama, K Kobayashi, J Vanhellemont, E Simoen, C Claeys, K Takakura, T Hirao, S Onoda

PHYSICA B-CONDENSED MATTER 340 337-340 2003年12月
Model for the radiation degradation of polycrystalline silicon films

M Nakabayashi, H Ohyama, K Takakura, E Simoen, C Claeys

IEEE TRANSACTIONS ON NUCLEAR SCIENCE 50(6) 2481-2485 2003年12月
Short-channel radiation effect in 60 MeV proton irradiated 0.13 mu m CMOS transistors

E Simoen, A Mercha, A Morata, K Hayama, G Richardson, JM Rafi, E Augendre, C Claeys, A Mohammadzadeh, H Ohyama …

IEEE TRANSACTIONS ON NUCLEAR SCIENCE 50(6) 2426-2432 2003年12月
Heavy-ion induced single-event transients in high-speed InP-InGaAs avalanche photodiodes

JS Laird, T Hirao, S Onoda, H Ohyama, T Kamiya

IEEE TRANSACTIONS ON NUCLEAR SCIENCE 50(6) 2225-2232 2003年12月
Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions

A Czerwinski, E Simoen, A Poyai, C Claeys, H Ohyama

IEEE TRANSACTIONS ON NUCLEAR SCIENCE 50(2) 278-287 2003年4月
Irradiation temperature dependence of radiation damage in STI Si diodes

H Ohyama, K Hayama, K Takakura, T Miura, K Shigaki, T Jono, E Simoen, A Poyai, C Claeys

MICROELECTRONIC ENGINEERING 66(1-4) 517-521 2003年4月

大山英典

基本情報

研究キーワード

研究分野

経歴

学歴

MISC

所属学協会

Works(作品等)

共同研究・競争的資金等の研究課題

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