2015年2月
Evaluation of a-type screw dislocations in m-GaN film by means of X-ray diffractometry
JAPANESE JOURNAL OF APPLIED PHYSICS
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- 巻
- 54
- 号
- 2
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/JJAP.54.025503
- 出版者・発行元
- IOP PUBLISHING LTD
Dislocations in an epitaxial GaN film with a (1010) surface (m-GaN) were investigated by means of X-ray diffractometry. It was clarified that a-type screw dislocations existed in the sample by evaluating diffraction contrast on X-ray topographs (XRTs). In addition, local lattice inclinations of the (1010) plane toward the [0001] direction were observed with spatial intervals similar to the separation distances of those a-type screw dislocations slipping on the (0001) basal plane and also on other cross-slip planes in the sample. (C) 2015 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.7567/JJAP.54.025503
- ISSN : 0021-4922
- eISSN : 1347-4065
- Web of Science ID : WOS:000350091000020