宇理須恆雄 (Tsuneo Urisu) - マイポータル - researchmap

基本情報

所属: 分子科学研究所教授

学位: 理学博士(東京大学)

J-GLOBAL ID: 200901043516756267
researchmap会員ID: 1000144729

外部リンク: http://groups.ims.ac.jp/organization/urisu_g/

研究キーワード

3

研究分野

2

経歴

2

1983年 - 1992年

1992- 岡崎国立共同研究機構分子科学研究所・教授/総合研究大学院大学・教授 1983-1992 日本電信電話株式会社・LSI研究所 1973-1983 日本電信電話株式会社・基礎研究所
1983年 - 1992年

NTT LSI Laboratories 1973-1983 NTT Basic Research Laboratories

委員歴

5

MISC

104

Device and material processes using synchrotron radiation ﾐ from micron to nanometers-

J. Jpn. Soci. Synchrotorn Rad. Res. 14 112-115 2001年
Nanostructure formation on Si(111) surface assisted by synchrotron radiation illumination ﾐCharacterization by scanning tunneling microscopy-,

J. Electron spectroscopy 119(2/3) 241-246 2001年
STM observation of surface nanostructures on Si(111) formed after synchrotron radiation stimulated cleaning,

Transactions MRS Japan 26 751-754 2001年
Initial statge of hydrogen etching of Si surfaces investigated by infrared reflection absorption spectroscopy

Jpn. J. Appl. Phys. 39(12B) 6985-6989 2000年
Ion desorption induced by core-electron transitions studied with electron-ion coincidence spectroscopy Kazuhiko Mase

Surf. Sci. 451(1/3) 143-152 2000年
Assignments of bending and stretching vibrational spectra and mechanisms of thermal decomposition of SiH┣D22┫D2 on Si(100) surfaces

Chem. Phys. Lett. 326(1/2) 163-168 2000年
SR-stimulated etching and OM VPE growth for semiconductor nanostructure fabrication

Mat. Sci. Eng. B74 7 2000年
Scanning Tunneling Microscopy Study of Si(111) Surface Morphology after Removal of SiO┣D22┫D2 by Synchrotron Radiation Illumination

Appl. Phys. Lett. 76(11) 1392-1394 2000年
Scanning Tunneling Microscopy Study of Surface Morphology of Si(111) after Synchrotron Radiation Stimulated Desorption of SiO┣D22┫D2

J. Vac. Sci. Technol. 18(4,Pt.1) 1153-1157 2000年
Aligned island formation using step-band networks on Si(111)

Y Homma, P Finnie, T Ogino, H Noda, T Urisu

JOURNAL OF APPLIED PHYSICS 86(6) 3083-3088 1999年9月
Control of surface composition on Ge/Si(001) by atomic hydrogen irradiation

Yoshihiro Kobayashi, Koji Sumitomo, Kenji Shiraishi, Tuneo Urisu, Toshio Ogino

Surface Science 436(1) 9-14 1999年8月10日
Quqntum Yield and Carbon Contamination in Thin Film Deposition Reaction by Core Electron Excitations

Appl. Organometallic Chem 13(3) 195-200 1999年
Site-specific phenomena in Si : 2p core-level photoionization of X┣D23┫D2Si(CH┣D22┫D2)nSi(CH┣D23┫D2)┣D23┫D2 (X=F or Cl, n=0-2) condensed on a Si(111) surface

Chem. Phys. 249(1) 15-27 1999年
Study of ion desorption induced by resonant core-electron excitation of isolated NH┣D23┫D2 monolayer adsorbed on a Xe film using Auger electron photoion coincidence spectroscopy

Jpn. J. Appl. Phys 38(Suppl.38-1) 325-327 1999年
Infrared reflection absorption spectroscopy of selective etching and decomposition stimulated by synchrotron radiation

T Urisu

MRS BULLETIN 24(1) 46-48 1999年1月
Scanning tunnelling microscopy for the study of the synchrotro-radiation stimulated process ; synchrotron-radiation stimulated desorption of SiO┣D22┫D2 films on Si(111)surface

Jpn. J. Appl. Phys 38(Suppl.38-1) 249-252 1999年
Construction of the multilayered-mirror monochromator beam line for the study of synchrotron radiation stimulated process

Rev. Sci. Instru 70(6) 2601-2605 1999年
Synchrotron-radiation stimulated desorption of SiO2 thin films on Si(111) surfaces observed by scanning tunneling microscopy

T. Miyamae, H. Uchida, I. H. Munro, T. Urisu

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 17(4) 1733-1736 1999年
Direct observation of synchrotron radiation stimulated desorption of thin SiO┣D22┫D2 films on Si(111)by scanning tunneling microscopy

Surf. Sci. Lett 437(1/2) L755-L760 1999年
Energy and polarization control in synchrotron radiation stimulated nano-process

SPIE Proceedings 373 340-350 1999年

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所属学協会

3

共同研究・競争的資金等の研究課題

5