武山 真弓

Spectroellipsometric Study of TaN and VN Films, J. Mistrik, K. Takahashi, R. Antos, M. Aoyama, T. Yamaguchi, Y. Anma, Y. Fukuda, M. B. Takeyama, A. Noya, Z.-T. Jang, S. M. Thurgate and G. V. Riessen 

International Conference on Spectroscopic Elipsometry-3, Vienna, ThP F43 2003年  

Structural Analyses of Cu[111]layer on Nb[110] Barrier Formed on SiO₂, Md. Maniruzzaman, M. B. Takeyama, Y. Hayasaka, E. Aoyagi, T. Ohsuna, and A. Noya 

2003 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Busan 19-22 2003年  

Failure Mechanism of Nano-crystalline VN barrier in Cu/VN/SiO₂/Si System, T. Itoi, O. Yanada, K. Satoh, M. B. Takeyama, and A. Noya 

2003 International Conference on Soled State Devices and Materials, Tokyo 4-18, 526-527 2003年  

Thermal Stability of W₂N Compound Barrier in W/W₂ N/Poly-Si Gate Electrode Configuration, A. Noya and M. B. Takeyama 

IEICE Transactions on Electronics E86-C(11) 2332-2335 2003年  

Spectroellipsometric Study of TaN and VN Films, J. Mistrik, K. Takahashi, R. Antos, M. Aoyama, T. Yamaguchi, Y. Anma, Y. Fukuda, M. B. Takeyama, A. Noya, Z.-T. Jang, S. M. Thurgate and G. V. Riessen 

International Conference on Spectroscopic Elipsometry-3, Vienna, ThP F43 2003年  

Structural Analyses of Cu[111]layer on Nb[110] Barrier Formed on SiO2, Md. Maniruzzaman, M. B. Takeyama, Y. Hayasaka, E. Aoyagi, T. Ohsuna, and A. Noya 2003 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Busan 

2003 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Busan 19-22 2003年  

Failure Mechanism of Nano-crystalline VN barrier in Cu/VN/SiO2/Si System, T. Itoi, O. Yanada, K. Satoh, M. B. Takeyama, and A. Noya 

2003 International Conference on Soled State Devices and Materials, Tokyo 4-8, 526-527 2003年  

Thermal Stability of W2N Compound Barrier in W/W2 N/Poly-Si Gate Electrode Configuration, A. Noya and M. B. Takeyama 

IEICE Transactions on Electronics 86-C(11) 2332-2335 2003年  

Application of Nano-crystalline TiZrN Barrier in Cu/si Contact System, M. B. Takeyama, T. Itoi, E. Aoyagi, and A. Noya, 

4th International Symposium on control of Semiconductor Interfaces, Karuizawa A2-3 2002年  

Application of Thin Nano-crystalline VN Barrier in Cu/VN/ SiO₂/Si System, M. B. Takeyama, K. Satoh, T. Itoi, M. Sakagami and A. Noya, 2002 

International Conference on Solid State Devices and Materials, Nagoya 4-13, 494-495 2002年  

Formation of [111] Preferentially Oriented Cu Layer on [110] Nb Barrier on SiO₂, Md. Maniruzzaman, M. B. Takeyama, and A. Noya 

2002 Asia-Pacific Workshop on Fundamental and Applicaion of Advanced Semiconductor Devices, Sapporo 111-114 2002年  

High Performance of Thin Nano-crystalline ZrN Diffusion Barriers in Cu/Si Contact Systems, M. B. Takeyama , T. Itoi, E. Aoyagi, A. Noya, 

Applied Surface Science 190(1/4) 450-454 2002年  

Application of Nano-crystalline TiZrN Barrier in Cu/si Contact System, M. B. Takeyama, T. Itoi, E. Aoyagi, and A. Noya, 

4th International Symposium on control of Semiconductor Interfaces, Karuizawa A2-3 2002年  

Application of Thin Nano-crystalline VN Barrier in Cu/VN/ SiO2/Si System, M. B. Takeyama, K. Satoh, T. Itoi, M. Sakagami and A. Noya, 2002 

International Conference on Solid State Devices and Materials, Nagoya 4-13, 494-495 2002年  

Formation of [111] Preferentially Oriented Cu Layer on [110] Nb Barrier on SiO2, Md. Maniruzzaman, M. B. Takeyama, and A. Noya 

2002 Asia-Pacific Workshop on Fundamental and Applicaion of Advanced Semiconductor Devices, Sapporo 111-114 2002年  

High Performance of Thin Nano-crystalline ZrN Diffusion Barriers in Cu/Si Contact Systems, M. B. Takeyama , T. Itoi, E. Aoyagi, A. Noya, 

Applied Surface Science 190(1/4) 450-454 2002年  

Application fo Cu-based Alloy Electrode for Realizaion of Thermally Stable Ohmic Contact to n-InP with Low Contact Resistance, M. B. Takeyama, A. Noya, T. Hashizume, and H. Hasegawa, 

Intern. Conf. on Rapid Thermal Processing for Future Semiconductor Devices, Mie 2.3 2001年  

Formation and Characterization of AlxMo1-x/n-InP Alloy Electrode System for Realizaiton of Thermally Stable Ohmic Contacts, R. Atsuchi, M. B. Takeyama, A. Noya, T. Hashizume, and H. Hasegawa 

Proc.13th Internationl Conference on Indium Phosphide and Related Materials, Nara 264-267 2001年