和田 隆夫

T.Wada and H.Fujimoto : Diodes Fabricated by Electron Beam Doping (Superdiffusion) Technique in Semiconductors at Room Temperature 

to be published in Defects and diffusion in Semi-conductors-Annual Retrospective 2003, Defect and Diffusion Forum, Scitec Pubrications, Switzerland 23-30 2003年  

T.Wada and H.Nagao: Algorithm Animation for Superdiffusion of a non-equilibrium in Semiconductors 

to be published in Defects and Diffusion in Semiconductors –Annual Retrospective 2003, Defect and Diffusion Forum, Scitec Publications, Switzerland 133-146 2003年  

Superdiffusion of Impurity Atoms in Damage-Free Regions of Semiconductors 

Phys. Stat. Sol. (c) 2(1), 780-787 2003年  

Electron Beam Doping of Impurity Atoms Into Semiconductors by Superdiffusion 

Phys. Stat. Sol. (c) 2(1), 788-794 2003年  

Superdiffusion of Impurity Atoms in Damage-Free Regions of Semiconductors 

phys. Stat. Sol. (c) 2(1), 1-7 (2003)/780-787 2003年  

Electron Beam Doping of Impurity Atoms Into Semiconductors by Superdiffusion 

phys. Stat. Sol. (c) 2(1), 1-7 (2003)/788-794 2003年  

H Nagao and T Wada; Algorithm Animation Systems for superdiffusion in Semiconductors using Com-puter Graphics 

10th Int.Conf.on Shallow-level Centers in Semiconductors (SLCS-10)Warsaw(2002) Abstract 64 64 2002年  

H Nagao and T Wada; Algorithm Animation Systems for superdiffusion in Semiconductors using Computer Graphics 10th Int.Conf.on Shallow-level Centers in Semiconductors (SLCS-10)Warsaw(2002) Abstract 64 （その他） 

SLCS-10 Warsaw 64 2002年  

T.Wada and H.Fujimoto :Superdiffusion of Imputity Atoms into Diamond and SiC Wafers by the kick-Out Mechanism 

Proc. 2nd ENDEASD Workshop (Sweden) 295-298 2000年  

T.Wada and Fujimoto: A Model for Electron Beam Doping Method –Bolon and Phosphorus Atoms into Damage-Free Regions of Si- 

Proc. 2nd ENDEASD Workshop(Sweden) 189-192 2000年  

T.Wada and H.Fujimoto :Superdiffusion of Imputity Atoms into Diamond and SiC Wafers by the kick-Out Mechanism 

Proc. 2nd ENDEASD Workshop (Sweden) 295-298 2000年  

T.Wada and Fujimoto: A Model for Electron Beam Doping Method –Bolon and Phosphorus Atoms into Damage-Free Regions of Si- 

Proc. 2nd ENDEASD Workshop(Sweden) 189-192 2000年  

Typical Electron Beam Doping(Superdiffusion)of Impurity Atoms in Damage-Free Regions of Semi-conductors by the Kick-Out Mechanism 

Jap. J. Appl. Phys. 39(12B) 7019-7025 2000年  

Electron Beam Doping (Superdiffusion) in Damage-Free Regions of Semiconductors by the Kick-Out Mechanism (Secondary-Ion Mass Spectrometer and Photoluminescence Measurements) 

Jap. J. Appl. Phys. 38(12B) 7144-7147 1999年  

Electron-Beam Doping by superdiffusion in unirradiated regions(x<300Å)of semiconductors at room temperatures 

Jap. J. Appl. Phys. 36(12B) 7669-7680 1997年  

Formation of GeSi alloy at or near the surface of Si wafers for the Si/Ge/Si system by the Electron-Beam Doping Method 

phys. stat. sol. (a) 161(1) 133-142 1997年  

T.Wada & K.Yasuda: Mechanism of electron-beam doping in semiconductors 

Phy. Rev. B. 53(8) 4770-4781 1996年