1999年4月
Bismuth-induced surface structure of Si(100) studied by scanning tunneling microscopy
APPLIED SURFACE SCIENCE
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- 巻
- 142
- 号
- 1-4
- 開始ページ
- 38
- 終了ページ
- 42
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/S0169-4332(98)00635-7
- 出版者・発行元
- ELSEVIER SCIENCE BV
We report results of a scanning tunneling microscopy investigation of the bismuth-induced structures at Si(100) surfaces. Long linear chains of bismuth dimers are formed on the Si(100) surface after bismuth deposition at 480 degrees C. This may be self-organized by an enhanced migration of atoms along the chains. Moreover, bismuth atoms adsorbed on the surface induce, by expelling silicon atoms from the substrate surface, a (2 x n) restructuring with linear defects perpendicular to the dimer rows on the Si terrace, (C) 1999 Elsevier Science B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/S0169-4332(98)00635-7
- ISSN : 0169-4332
- CiNii Articles ID : 80011069517
- Web of Science ID : WOS:000080163900009