We have prepared Cu(In,Ga)S-2 films with an almost homogenous Ga depth distribution using the two-stage multi-source evaporation process on soda lime glass (SLG) substrates with on, of three different kinds of back contact: Mo(1000nm), ZnO(500nm), and Mo(30nm)/ZnO(500nm), respectively. We have investigated the depth profiles of Zn and Na (diffused from SLG) in Cu(In,Ga)S-2 films by secondary ion mass spectroscopy (SIMS) and compare them to those in films prepared by single stage co-evaporation. The efficiencies are higher on Mo/ZnO than they are on ZnO. It was observed by SIMS that the amount of Zn in Cu(In,Ga)S-2 on Mo/ZnO is lower than it is, in Cu(In,Ga)S-2 on ZnO. The obtained efficiencies are generally higher with two-stage evaporation than with single stage co-evaporation. The Na concentration in Cu(In,Ga)S-2 prepared by two-stage evaporation is two orders of magnitude higher than in single stage co-evaporated films. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim