2006年11月
Electrical properties of organic field-effect transistor with Lewis-acid thin film between organic and insulator layers
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
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- 巻
- 45
- 号
- 11
- 開始ページ
- 8890
- 終了ページ
- 8893
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/JJAP.45.8890
- 出版者・発行元
- INST PURE APPLIED PHYSICS
Organic field-effect transistors (OFETs) with Lewis-acid films were fabricated using copper phthalocyanine (CuPc), and the operating mechanism was studied. These OfETs have active layers of CuPc and vanadium pentoxide (V2O5) as a Lewis-acid film. A large drain current was observed in OFET's with a V2O5 layer for a positive gate voltage, and the mobility of these OFETs was improved compared with OFETs with only CuPc as an active layer. To investigate the operating mechanism, Xray diffraction patterns, UV-vis absorption spectra, and ionization potentials were measured in V2O5 films and CuPc films with and without a co-evaporation Of V2O5. Each characteristic of the CuPc layer changed owing to the introduction Of V2O5 It was considered that a CT complex is formed in the CuPc layer owing to the interaction between CuPc and V2O5 molecules, and contributes to the large drain current and improvement in mobility.
- リンク情報
- ID情報
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- DOI : 10.1143/JJAP.45.8890
- ISSN : 0021-4922
- Web of Science ID : WOS:000242323200074