Jifeng Wang - My portal

Profile Information

Affiliation: Associate Professor, Former Institution/Organization Tohoku University Institute of Multidisciplinary Research for Advanced Materials Division of Materials Design

J-GLOBAL ID: 200901011500277327
researchmap Member ID: 1000183845

Research Interests

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /

Misc.

149

Visible luminescence of nanocrystalline AlN : Er thin film by co-deposition of AlN, Er, and SiO2

J. -W. Lim, W. Takayama, Y. F. Zhu, J. W. Bae, J. F. Wang, S. Y. Ji, K. Mimura, J. H. Yoo, M. Isshiki

CURRENT APPLIED PHYSICS, 7(3) 236-239, Mar, 2007
Visible luminescence of nanocrystalline AlN : Er thin film by co-deposition of AlN, Er, and SiO2

J. -W. Lim, W. Takayama, Y. F. Zhu, J. W. Bae, J. F. Wang, S. Y. Ji, K. Mimura, J. H. Yoo, M. Isshiki

CURRENT APPLIED PHYSICS, 7(3) 236-239, Mar, 2007
Behaviors of group Va elements in ZnSe

J. F. Wang, C. B. Oh, M. Isshiki

Journal of Crystal Growth, 297(1) 95-99, Dec 15, 2006
Behaviors of group Va elements in ZnSe

J. F. Wang, C. B. Oh, M. Isshiki

JOURNAL OF CRYSTAL GROWTH, 297(1) 95-99, Dec, 2006
Growth process of β-FeSi2 epitaxial film on Si(1 1 1) by molecular beam epitaxy

S. Y. Ji, J. F. Wang, J. W. Lim, M. Isshiki

Applied Surface Science, 253(2) 444-448, Nov 15, 2006
Growth process of beta-FeSi2 epitaxial film on Si(111) by molecular beam epitaxy

S. Y. Ji, J. F. Wang, J. -W. Lim, M. Isshiki

APPLIED SURFACE SCIENCE, 253(2) 444-448, Nov, 2006
Growth process of beta-FeSi2 epitaxial film on Si(111) by molecular beam epitaxy

S. Y. Ji, J. F. Wang, J. -W. Lim, M. Isshiki

APPLIED SURFACE SCIENCE, 253(2) 444-448, Nov, 2006
Growth conditions of β-FeSi2 single crystals by chemical vapor transport

J. F. Wang, S. Saitou, S. Y. Ji, M. Isshiki

Journal of Crystal Growth, 295(2) 129-132, Oct 1, 2006
Growth conditions of beta-FeSi2 single crystals by chemical vapor transport

J. F. Wang, S. Saitou, S. Y. Ji, M. Isshiki

JOURNAL OF CRYSTAL GROWTH, 295(2) 129-132, Oct, 2006
Growth conditions of beta-FeSi2 single crystals by chemical vapor transport

J. F. Wang, S. Saitou, S. Y. Ji, M. Isshiki

JOURNAL OF CRYSTAL GROWTH, 295(2) 129-132, Oct, 2006
Two-step growth of Cd0.96Zn0.04Te/Si(111) epilayers by HWE

GM Lalev, JF Wang, JW Lim, S Abe, K Masumoto, M Isshiki

MATERIALS LETTERS, 60(9-10) 1198-1203, May, 2006
Two-step growth of Cd0.96Zn0.04Te/Si(111) epilayers by HWE

Georgi M. Lalev, Jifeng Wang, Jae-Won Lim, Seishi Abe, Katashi Masumoto, Minoru Isshiki

Materials Letters, 60(9-10) 1198-1203, May, 2006
Two-step growth of Cd0.96Zn0.04Te/Si(111) epilayers by HWE

GM Lalev, JF Wang, JW Lim, S Abe, K Masumoto, M Isshiki

MATERIALS LETTERS, 60(9-10) 1198-1203, May, 2006
Two-step growth of Cd0.96Zn0.04Te/Si(111) epilayers by HWE

GM Lalev, JF Wang, JW Lim, S Abe, K Masumoto, M Isshiki

MATERIALS LETTERS, 60(9-10) 1198-1203, May, 2006
Behavior of antimony in ZnSe grown by a closed Bridgman method

JF Wang, M Isshiki

APPLIED PHYSICS LETTERS, 88(13) 132105-132107, Mar, 2006
Behavior of antimony in ZnSe grown by a closed Bridgman method

JF Wang, M Isshiki

APPLIED PHYSICS LETTERS, 88(13) 132105-132107, Mar, 2006
Preparation of AlN:Er thin films by simultaneous deposition using AlN, Er, and SiO2 targets

Proceedings of the 6th International Conference on Reactive Plasma and 23rd Symposium on Plasma Processing, ,673-674, 2006
Effect of Substrate Rotation on Growing β-FeSi2 Epitaxial Film by MBE

JI S.y, LIM J.-w, WANG J.f, SAITOU S, MIMURA K, LALEV G.m, ISSHIKI M

Vacuum, 81(3) 353-359, 2006
Behaviors of group Va elements in ZnSe

WANG J.f, OH C.b, ISSHIKI M

Journal of Crystal Growth, 297(1) 95-99, 2006
Improved reproducibility in zinc oxide single crystal growth using chemical vapor transport

M Mikami, T Sato, JF Wang, Y Masa, M Isshiki

JOURNAL OF CRYSTAL GROWTH, 286(2) 213-217, Jan, 2006

Books and Other Publications

Widebandgap II-VI Semiconductor: Growth and properties. In Handbook of Electronic Materials

Edited by Safa Kasap and Peter Capper. Springer, 2006
II-VI Semiconductors for Optoelectronics: CdS, CdSe, CdTe. In Handbook of Electronic Materials

Edited by Safa Kasap and Peter Capper. Springer, 2006
Widebandgap II-VI Semiconductor: Growth and properties. In Handbook of Electronic Materials

Edited by Safa Kasap and Peter Capper. Springer, 2006
II-VI Semiconductors for Optoelectronics: CdS, CdSe, CdTe. In Handbook of Electronic Materials

Edited by Safa Kasap and Peter Capper. Springer, 2006
Crystal Growth of Wide-gap II-VIs

Edited by Peter Capper. Published by John Wiley & Sons, 2005
Bulk crystal growth of electronic, optical and optoelectrinic materilas

John Wiley & Sons, Ltd, 2005
Crystal Growth of Wide-gap II-VIs

Edited by Peter Capper. Published by John Wiley & Sons, 2005
Bulk crystal growth of electronic, optical and optoelectrinic materilas

John Wiley & Sons, Ltd, 2005
半導体結晶成長

コロナ社, 1999
Semiconductor Crystal Growth

Corona Publishing Co. Ltd., 1999

Professional Memberships

Works

II-VI族化合物半導体の評価

2000 - 2003
Evaluation of II-VI compoud semiconductors

2000 - 2003
ブリッジマン法によるZnSe単結晶の成長と欠陥制御

1999 - 2000
Growth of ZnSe single crystals by Bridgman and control of defects

1999 - 2000
ＭＢＥ法によるZnSeホモエピタキシャル膜の成長と評価

1998 - 1999
Growth and evaluation of ZnSe/ZnSe grown by MBE

1998 - 1999
フォトルミネッセンスによる化合物半導体中の欠陥および不純物の挙動に関する研究

1997 - 1998
Behavior of impurities in compound semiconductors

1997 - 1998

Research Projects

β-FeSi2単結晶の作製

科学研究費補助金, 2001 - 2004
Bridgman法によるZnSe単結晶の育成

科学研究費補助金, 2001 - 2004
Preparation of β-FeSi2 single crystals

Grant-in-Aid for Scientific Research, 2001 - 2004
Bridgman growth of ZnSe crystals

Grant-in-Aid for Scientific Research, 2001 - 2004