2009年
Oxidation of Rare Earth Silicon Oxynitride J-Phases
SIAIONS AND NON-OXIDES
- ,
- 巻
- 403
- 号
- 開始ページ
- 57
- 終了ページ
- 59
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.4028/3-908454-00-X.57
- 出版者・発行元
- TRANS TECH PUBLICATIONS LTD
Oxidation behavior of R(4)Si(2)O(7)N(2) (J-phase; R = Y and rare-earth element) has been investigated by thermometric measurements in air. All R(4)Si(2)O(7)N(2), of which the powder samples are prepared by gas-pressured sintering method under 1 MPa of N(2) gas, are oxidized to R(2)SiO(5) with an exothermic reaction in air under an ambient pressure. The oxidation temperature to produce the final oxide increases from c.a. 930 to 1060 degrees C with decreasing the ionic radii of the rare earth elements.
- リンク情報
- ID情報
-
- DOI : 10.4028/3-908454-00-X.57
- ISSN : 1013-9826
- Web of Science ID : WOS:000266237700015