MISC

2016年6月

An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories

IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS
  • Tetsuo Endoh
    • ,
  • Hiroki Koike
    • ,
  • Shoji Ikeda
    • ,
  • Takahiro Hanyu
    • ,
  • Hideo Ohno
巻
6
号
2
開始ページ
109
終了ページ
119
記述言語
英語
掲載種別
記事・総説・解説・論説等（学術雑誌）
DOI
10.1109/JETCAS.2016.2547704
出版者・発行元
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-torque-transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.
リンク情報
DOI
https://doi.org/10.1109/JETCAS.2016.2547704
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000378267100002&DestApp=WOS_CPL
ID情報
  • DOI : 10.1109/JETCAS.2016.2547704
  • ISSN : 2156-3357
  • Web of Science ID : WOS:000378267100002
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