2018年4月1日
Novel Method of Evaluating Accurate Thermal Stability for MTJs Using Thermal Disturbance and its Demonstration for Single-/Double-Interface p-MTJ
IEEE Transactions on Magnetics
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- 巻
- 54
- 号
- 4
- 開始ページ
- 1
- 終了ページ
- 1
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1109/TMAG.2017.2688440
- 出版者・発行元
- Institute of Electrical and Electronics Engineers Inc.
We propose a novel method to evaluate the accurate thermal stability factor Δ0 quickly, in 10 min for one target magnetic tunnel junction (MTJ), without magnetoresistance random access memory chip which includes CMOS devices. This method is based on the thermal disturbance between parallel state and antiparallel state at high temperature as well as the temperature dependence of material properties. Using this method, we have successfully demonstrated that Δ0 factors of 70 nm φ p-MTJ with single and double CoFeB/MgO interfaces at 24 °C are 76.1 and 178.2, respectively. The value of Δ0 of p-MTJ with double CoFeB/MgO interface is about twice as single one.
- ID情報
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- DOI : 10.1109/TMAG.2017.2688440
- ISSN : 0018-9464
- SCOPUS ID : 85044315910