2011年11月
Effect of electron injection into phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force microscopy
APPLIED PHYSICS LETTERS
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- 巻
- 99
- 号
- 21
- 開始ページ
- 213101-1-3
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1063/1.3663624
- 出版者・発行元
- AMER INST PHYSICS
We have comparatively studied the effects of electron injection in individual phosphorus-donor potential wells at 13 K and 300 K by Kelvin probe force microscopy in silicon-on-insulator metal-oxide-semiconductor field-effect-transistors. As a result, at 13 K, localized single-electron filling into the phosphorus-donor potential well is found, reflecting single-electron tunneling transport through individual donors, whereas at 300 K, spatially extended and continuous electron filling over a number of phosphorus-donors is observed, reflecting drift-diffusion transport. (C) transport. (C) 2011 American Institute of Physics. [doi:10.1063/1.3663624]
- リンク情報
- ID情報
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- DOI : 10.1063/1.3663624
- ISSN : 0003-6951
- Web of Science ID : WOS:000297471000034