YAMADA Yoichi

J-GLOBAL         Last updated: Oct 1, 2019 at 16:28
 
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Name
YAMADA Yoichi
E-mail
yamadayamaguchi-u.ac.jp
Affiliation
Yamaguchi University
Section
Quantum Devices and Materials Engineering Graduate School of Science and Engineering Materials Science and Engineering(Engineering) Graduate School of Science and Engineering(Engineering) YAMAGUCHI UNIVERSITY
Job title
Professor
Degree
Doctor (Science), Master of Engineering
Other affiliation
Kyoto University, Institute for Chemical Research, International Research Center for Elements ScienceUniversity of Tsukuba, Institute of Physics

Research Areas

 
 

Academic & Professional Experience

 
Apr 1993
 - 
Mar 1995
Research Associate, University of Tsukuba, Institute of Physics
 
Apr 1995
 - 
Mar 1997
Research Associate, Faculty of Engineering, YAMAGUCHI UNIVERSITY
 
Apr 1997
 - 
Mar 2006
Associate Professor, Faculty of Engineering, YAMAGUCHI UNIVERSITY
 
Apr 2006
 - 
Mar 2007
Associate Professor, Graduate School of Science and Engineering(Engineering), YAMAGUCHI UNIVERSITY
 
Apr 2006
 - 
Mar 2007
Visiting Associate Professor, Kyoto University, Institute for Chemical Research, International Research Center for Elements Science
 
Apr 2007
 - 
Mar 2010
Associate Professor, Graduate School of Science and Engineering(Engineering), YAMAGUCHI UNIVERSITY
 
Apr 2010
 - 
Mar 2016
Professor, Graduate School of Science and Engineering(Engineering), YAMAGUCHI UNIVERSITY
 
Apr 2016
 - 
Today
Professor, Graduate School of Sciences and Technology for Innovation, Yamaguchi University
 

Education

 
Apr 1984
 - 
Mar 1988
Department of Electrical Engineering, Faculty of Engineering, Osaka University
 
Apr 1988
 - 
Mar 1990
Department of Electrical Engineering, Graduate School of Engineering, Osaka University
 
Apr 1990
 - 
Mar 1993
Department of Physics, Graduate School of Physics, University of Tsukuba
 

Awards & Honors

 
Aug 1999
ICL'99 Young Researcher Award
Winner: Yoichi Yamada
 

Published Papers

 
S. Kurai, A. Wakamatsu, and Y. Yamada
Japanese Journal of Applied Physics   58(SC) SCCB13-1-SCCB13-6   May 2019   [Refereed]
H. Murotani, K. Shibuya, A. Yoneda, Y. Hashiguchi, H. Miyoshi, S. Kurai, N. Okada, K. Tadatomo, Y. Yano, T. Tabuchi, K. Matsumoto, and Y. Yamada
Japanese Journal of Applied Physics   58(SC) SCCB02-1-SCCB02-5   Apr 2019   [Refereed]
M. Ajmal Khan, N. Maeda, M. Jo, Y. Akamatsu, R. Tanabe, Y. Yamada, and H. Hirayama
Journal of Materials Chemistry C   7(1) 143-152   Jan 2019   [Refereed]
H. Murotani and Y. Yamada
Japanese Journal of Applied Physics   58(1) 011003-1-011003-6   Jan 2019   [Refereed]
Satoshi Kurai, Kohei Okawa, Ryoga Makio, Genki Nobata, Junji Gao, Kohei Sugimoto, Kohei Sugimoto, Narihito Okada, Kazuyuki Tadatomo, Yoichi Yamada
Journal of Applied Physics   124 083107-1-083107-7   Aug 2018   [Refereed]
© 2018 Author(s). We used photoluminescence (PL) spectroscopy combined with scanning near-field optical microscopy to directly observe the potential barriers in InGaN/GaN multiple quantum wells (MQWs) on a GaN layer grown under moderate temperatur...
Kohei Sugimoto, Narihito Okada, Satoshi Kurai, Yoichi Yamada, Kazuyuki Tadatomo
Japanese Journal of Applied Physics   57 062101-1-062101-5   Jun 2018   [Refereed]
© 2018 The Japan Society of Applied Physics. We evaluated the electrical properties of InGaN-based light-emitting diodes (LEDs) with a superlattice (SL) layer or a mid-temperature-grown GaN (MT-GaN) layer just beneath the multiple quantum wells (M...
Satoshi Kurai, Nobuto Imura, Li Jin, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
Japanese Journal of Applied Physics   57 060311-1-060311-4   Jun 2018   [Refereed]
© 2018 The Japan Society of Applied Physics. We investigated the spatial distribution of luminescence near threading dislocations in AlGaN/AlGaN multiple quantum wells (MQWs) by cathodoluminescence mapping. Emission at the higher-energy side of th...
Satoshi Kurai, Renma Mihara, Genki Nobata, Kohei Okawa, Narihito Okada, Kazuyuki Tadatomo, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto, Yoichi Yamada
Physica Status Solidi (B) Basic Research   255 1700322-1-1700322-6   May 2018   [Refereed]
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim We investigated nanoscopic spectroscopy of blue and green InGaN multiple quantum wells (MQWs) by scanning near-field optical microscopy (SNOM). The photoluminescence (PL) spectra showed emission ...
Satoshi Kurai, Shota Higaki, Nobuto Imura, Kohei Okawa, Ryoga Makio, Narihito Okada, Kazuyuki Tadatomo, Yoichi Yamada
Physica Status Solidi (B) Basic Research   255 1700358-1-1700358-6   May 2018   [Refereed]
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim We carried out spot cathodoluminescence (CL) with scanning electron microscopy (SEM-CL) of InGaN multiple quantum well (MQW) structures with an In molar fraction of 18% grown on c-plane sapphire ...
Hideaki Murotani, Kazuki Ikeda, Takuto Tsurumaru, Ryota Fujiwara, Satoshi Kurai, Hideto Miyake, Kazumasa Hiramatsu, Yoichi Yamada
Physica Status Solidi (B) Basic Research   255 1700374-1-1700374-5   May 2018   [Refereed]
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Excitonic optical properties of an Al0.61Ga0.39N epitaxial layer are studied by using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The peak structures due to the biexciton two-pho...

Misc

 
Excitonic optical properties of deep-ultraviolet nitride-based alloy semiconductors
Yoichi Yamada
Function and Materials   31(5) 40-46   2011
Excitonic Optical Properties of II-VI Compound Semiconductors
Yoichi Yamada
OYO BUTURI   70(3) 317-321   Mar 2001
Optical Properties of Bound Excitons and Biexcitons in GaN
Y. Yamada, C. Sasaki, Y. Yoshida, S. Kurai, T. Taguchi, T. Sugahara, K. Nishino, and S. Sakai
IEICE Transactions on Electronics   E83-C(4) 605-611   Apr 2000
Localized Biexcitons and Optical Gain in ZnS-Based Quantum Wells
Yoichi Yamada
The Transactions of the Institute of Electronics, Information and Communication Engineers C-II   J81-C-II(1) 42-50   Jan 1998
Lasing Mechanism of Blue and Ultraviolet Semiconductor Lasers
Yoichi Yamada
The Review of Laser Engineering   25(7) 493-497   Jul 1997

Books etc

 
Wide Bandgap Semiconductors - Fundamental Properties and Modern Photonic and Electronic Devices
Kiyoshi Takahashi et al. (Part:Joint Work)
Springer-Verlag GmbH   2007   ISBN:3-540-47234-7
Optical Properties of Low-Dimensional Materials
T. Ogawa, T. Nakayama, M. Nakayama, Y. Yamada, Y. Kanemitsu, T. Ishihara, Y. Iwasa, and Y. Nozue (Part:Joint Work)
World Scientific Publishing Co. Pte. Ltd.   Sep 1995   ISBN:981-02-2231-9

Conference Activities & Talks

 
Achievement of internal quantum efficiency up to 53 % at 326 nm-UVA emission from AlGaN QWs with engineering of highly relaxed buffer layer
M. Ajmal Khan, R. Takeda, H. Miyoshi, Y. Yamada, S. Fujikawa, N. Maeda, M. Jo, and H. Hirayama
4th International Workshop on Ultraviolet Materials and Devices   13 Sep 2019   
Optically pumped stimulated emission from AlGaN-based UV-C multiple quantum wells with high internal quantum efficiency of 16 % at 750 K
H. Murotani, K. Hisanaga, R. Tanabe, A. Hamada, N. Maeda, M. Jo, H. Hirayama, and Y. Yamada
13th International Conference on Nitride Semiconductors   9 Jul 2019   
Role of exciton recombination processes on internal quantum efficiency in AlGaN-based UV-B multiple quantum wells
H. Murotani, H. Miyoshi, R. Takeda, M. A. Khan, N. Maeda, M. Jo, H. Hirayama, and Y. Yamada
13th International Conference on Nitride Semiconductors   9 Jul 2019   
Temperature-dependent cathodoluminescence mapping of InGaN epitaxial layers with different In composition
S. Kurai, A. Wakamatsu, and Y. Yamada
International Workshop on Nitride Semiconductors 2018   13 Nov 2018   
Spatially resolved cathodoluminescence on dot-like high-energy emissions near threading dislocations in AlGaN multiple quantum wells
S. Kurai, N. Imura, L. Jin, H. Miyake, K. Hiramatsu, and Y. Yamada
International Workshop on Nitride Semiconductors 2018   12 Nov 2018   
Analysis of efficiency curves of near-UV, blue, and green emitting InGaN multiple quantum wells using rate equations of exciton recombination
H. Murotani, K. Shibuya, A. Yoneda, Y. Hashiguchi, H. Miyoshi, S. Kurai, N. Okada, K. Tadatomo, Y. Yano, T. Tabuchi, K. Matsumoto, and Y. Yamada
International Workshop on Nitride Semiconductors 2018   12 Nov 2018   
Temperature dependence of excitonic transitions in deep ultraviolet emitting AlGaN multiple quantum wells
H. Murotani, Y. Hayakawa, H. Miyake, K. Hiramatsu, and Y. Yamada
International Workshop on UV Materials and Devices 2017   16 Nov 2017   
Deep UV spectroscopy of dense excitons in AlGaN-based quantum wells [Invited]
Y. Yamada
International Workshop on UV Materials and Devices 2017   15 Nov 2017   
Localization-enhanced biexciton binding in Ga-rich InGaN and AlGaN epitaxial layers
K. Umezawa, E. Kobayashi, H. Murotani, S. Kurai, and Y. Yamada
12th International Conference on Nitride Semiconductors   25 Jul 2017   
Temperature dependence of Stokes shift of excitons and biexcitons in Al0.61Ga0.39N epitaxial layers
H. Murotani, K. Ikeda, T. Tsurumaru, R. Fujiwara, S. Kurai, H. Miyake, K. Hiramatsu, and Y. Yamada
12th International Conference on Nitride Semiconductors   25 Jul 2017   

Research Grants & Projects

 
Fundamental properties and optical functionality of wide-gap semiconductor strained-layer superlattices
Project Year: Apr 1992 - Mar 1993
Formation of optical gain in II-VI semiconductor quantum-well structures
Project Year: Apr 1994 - Mar 1995
Short-wavelength quantum-well lasers based on radiative decay process of low-dimensional biexcitons
Project Year: Apr 1996 - Mar 1997
Localization of biexcitons and mechanism of optical gain formation in semiconductor low-dimensional structures
Project Year: Apr 1997 - Mar 1999
Localization of biexcitons and mechanism of optical gain formation in semiconductor low-dimensional structures
Project Year: Apr 1997 - Mar 1999
Control of biexciton localization and optical functionality in ZnMgCdS-based semiconductor quantum structures
Project Year: Apr 2000 - Mar 2003
Control of biexciton localization and optical functionality in ZnMgCdS-based semiconductor quantum structures
Project Year: Apr 2000 - Mar 2003
Control of biexciton localization and optical functionality in ZnMgCdS-based semiconductor quantum structures
Project Year: Apr 2000 - Mar 2003
Control of biexciton localization and optical functionality in nitride-based ultraviolet alloy semiconductors
Project Year: Apr 2004 - Mar 2007
Control of biexciton localization and optical functionality in nitride-based ultraviolet alloy semiconductors
Project Year: Apr 2004 - Mar 2007
Control of biexciton localization and optical functionality in nitride-based ultraviolet alloy semiconductors
Project Year: Apr 2004 - Mar 2007
Optical spectroscopy of dense excitonic systems in AlN-based deep-UV semiconductors
Project Year: Apr 2007 - Mar 2009
Optical spectroscopy of dense excitonic systems in AlN-based deep-UV semiconductors
Project Year: Apr 2007 - Mar 2009
Optical spectroscopy of dense excitonic systems in deep-UV ternary alloy semiconductors
Project Year: Apr 2009 - Mar 2011
Optical spectroscopy of dense excitonic systems in deep-UV ternary alloy semiconductors
Project Year: Apr 2009 - Mar 2011