山部紀久夫 (Yamabe Kikuo) - マイポータル

基本情報

学位: 工学博士(大阪大学)

J-GLOBAL ID: 200901072088276034
researchmap会員ID: 1000186121

研究分野

経歴

委員歴

2001年 - 2003年

応用物理学会, 理事

受賞

1994年

日経BP技術賞電子部門

山部紀久夫

論文

極薄シリコン酸化膜における原子レベルの膜厚均一性と信頼性

山部, 紀久夫, 蓮沼, 隆

Journal of the Vacuum Society of Japan 58(1) 27-34 2015年
Oxidation characteristics of silicon exposed to O(D-1(2)) and O(P-3(2)) radicals and stress-relaxation oxidation model for O(D-1(2)) radicals

Yoshiro Kabe, Ryu Hasunuma, Kikuo Yamabe

JAPANESE JOURNAL OF APPLIED PHYSICS 53(3) 031501-1-031501-9 2014年3月査読有り
Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu, Masakazu Goto, Koji Nagatomo, Seiji Inumiya, Katsuyuki Sekine, Yuichiro Mitani, Kikuo Yamabe

MICROELECTRONICS RELIABILITY 53(12) 1868-1874 2013年12月
Evaluation of kink generation rate and step flow velocity on Si(111) during wet etching

Ryu Hasunuma, Kikuo Yamabe

Japanese Journal of Applied Physics 52(11) 110127-110127-4 2013年11月
Microscopic thickness uniformity and time-dependent dielectric breakdown lifetime dispersion of thermally grown ultrathin SiO2 film on atomically flat Si surface

Ryu Hasunuma, Yusuke Hayashi, Masahiro Ota, Kikuo Yamabe

Japanese Journal of Applied Physics 52(3) 2013年3月査読有り
Effects of Plasma Irradiation in Arsenic Plasma Doping Using Overhang Test Structures

Masafumi,Kubota, Shigenori,Hayashi, Mototsugu,Ogura, Yuichiro,Sasaki, Susumu,Okada, Yamabe,Kikuo

JAPANESE JOURNAL OF APPLIED PHYSICS 52(021301) 021301-1-021301-5 2013年2月査読有り
Oxidation of Silicon Utilizing a Microwave Plasma System: Electric-Stress Hardening of SiO2 Films by Controlling the Surface and Interface Roughness

Yoshiro Kabe, Ryu Hasunuma, Kikuo Yamabe

JAPANESE JOURNAL OF APPLIED PHYSICS 51(4) 41104-041104-5 2012年4月査読有り
Variation of Chemical Vapor Deposited SiO2 Density Due to Generation and Shrinkage of Open Space During Thermal Annealing

Mitsuru Sometani, Ryu Hasunuma, Masaaki Ogino, Hitoshi Kuribayashi, Yoshiyuki Sugahara, Akira Uedono, Kikuo Yamabe

JAPANESE JOURNAL OF APPLIED PHYSICS 51(2) 21101-021101-3 2012年2月査読有り
Reduction of Low-Frequency Noise in Si MOSFETs by Using Nanowire Channel

山部,紀久夫, Izumi,Hirano, Yasushi,Nakasaki, Shigeto,Fukatsu, Masakazu,Goto, Koji,Nagatomo, Seiji,Inumiya, Katsuyuki,Sekine, Yuichiro,Mitani

ECS Transactions 45 2012年査読有り
Growth of atomically step-free surface on diamond {111} mesas

Norio Tokuda, Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, Satoshi Yamasaki

DIAMOND AND RELATED MATERIALS 19(4) 288-290 2010年4月査読有り
ゲートシリコン酸化膜の絶縁破壊寿命とその分布

山部, 紀久夫

應用物理 78(9) 850-855 2009年9月査読有り
シリコン酸化膜フェンス効果を利用した原子ステップの形状・速度制御

鎌田, 勝也, 尾崎, 亮太, 矢田, 隆伸, 蓮沼, 隆, 山部, 紀久夫

表面科学 : hyomen kagaku = Journal of the Surface Science Society of Japan 30(8) 422-426 2009年8月査読有り
Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature

Ryuji Takeda, Masahiro Narita, Seiji Tani-ike, Kikuo Yamabe

JAPANESE JOURNAL OF APPLIED PHYSICS 48(5) 2009年5月査読有り
Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-k P-Channel Field Effect Transistors Using Ion-Beam W

Fumio Ootsuka, Akira Katakami, Kiyoshi Shirai, Hiroyuki Nakata, Takahisa Eimori, Yasuo Nara, Yuzuru Ohji, Kazuhiro Shimura, Sadayoshi Horii, Nobuyuki Sano …

JAPANESE JOURNAL OF APPLIED PHYSICS 48(5) 2009年5月査読有り
Roughness Increase on Surface and Interface of SiO2 Grown on Atomically Flat Si(111) Terrace

Keichiro Ohsawa, Yusuke Hayashi, Ryu Hasunuma, Kikuo Yamabe

JAPANESE JOURNAL OF APPLIED PHYSICS 48(5) 2009年5月
Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing

Mitsuru Sometani, Ryu Hasunuma, Masaaki Ogino, Hitoshi Kuribayashi, Yoshiyuki Sugahara, Kikuo Yamabe

JAPANESE JOURNAL OF APPLIED PHYSICS 48(5) 2009年5月
Vestiges of Multiple Progressive Dielectric Breakdown on HfSiON Surfaces

Tomohiro Hayashi, Chihiro Tamura, Motoyuki Sato, Ryu Hasunuma, Kikuo Yamabe

JAPANESE JOURNAL OF APPLIED PHYSICS 48(5) 2009年5月
Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films

Chihiro Tamura, Tomohiro Hayashi, Yuuki Kikuchi, Kenji Ohmori, Ryu Hasunuma, Kikuo Yamabe

JAPANESE JOURNAL OF APPLIED PHYSICS 48(5) 2009年5月査読有り
Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface

Norio Tokuda, Hitoshi Umezawa, Hiromitsu Kato, Masahiko Ogura, Satoshi Gonda, Kikuo Yamabe, Hideyo Okushi, Satoshi Yamasaki

APPLIED PHYSICS EXPRESS 2(5) 2009年5月
Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface

Norio Tokuda, Hitoshi Umezawa, Hiromitsu Kato, Masahiko Ogura, Satoshi Gonda, Kikuo Yamabe, Hideyo Okushi, Satoshi Yamasaki

APPLIED PHYSICS EXPRESS 2(5) 55001-1 2009年5月査読有り

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書籍等出版物

Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10

Uedono, A, Naito, T, Otsuka, T, Ito, K, Shiraishi, K, Yamabe, K, Miyazaki, S, Watanabe, H, Umezawa, N, Hamid, A, Chikyow, T, Ohdaira, T, Suzuki, R, Ishibashi, S, Inumiya, S, Kamiyama, S, Akasaka, Y, Nara, Y, Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)

WILEY-V C H VERLAG GMBH 2007年1月
2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL

Yamabe, K, Goto, M, Higuchi, K, Uedono, A, Shiraishi, K, Miyazaki, S, Torii, K, Boero, M, Chikyow, T, Yamasaki, S, Kitajima, H, Yamada, K, Arikado, T

IEEE 2005年1月 (ISBN: 0780388038)
FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES

Uedono, A, Mitsuhashi, R, Horiuchi, A, Torii, K, Yamabe, K, Yamada, K, Suzuki, R, Ohdaira, T, Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)

MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2

Senzaki, J, Goto, M, Kojima, K, Yamabe, K, Fukuda, K (担当:分担執筆, 範囲:A long-term reliability of thermal oxides grown on n-type 4H-SiC wafer)

TRANS TECH PUBLICATIONS LTD 2004年1月
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS

Uedono, A, Kiyohara, M, Shimoyama, K, Matsunaga, Y, Yasui, N, Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)

TRANS TECH PUBLICATIONS LTD 2004年1月 (ISBN: 0878499369)
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY

Tokuda, N, Nishiguchi, S, Yamasaki, S, Miki, K, Yamabe, K (担当:分担執筆, 範囲:Local dielectric degradation of Cu-contaminated SiO2 thin films)

TRANS TECH PUBLICATIONS LTD 2004年1月 (ISBN: 3908450829)
“Local Electrical Characteristics of Cu-Contaminated SiO2 thin films”

山部, 紀久夫

2002年1月
“Topography change with Multilayer Oxidation at SiO₂/Si(111) interfaces”

山部, 紀久夫

2002年1月
“Topological change with Multilayer Oxidation at SiO₂/Si(111) interfaces”

山部, 紀久夫

2002年1月
“Increasing roughness at Si02/Si interface during thermal oxidation”

山部, 紀久夫

2001年1月
Si Surface Topography Control by Thermal Oxidation

山部, 紀久夫

2000年1月
Two-dimensional Distribution of Leakage Current in Ultrathin Oxide on Stepped Si surface

山部, 紀久夫

2000年1月
ゲート酸化膜の物性と電気的特性

山部, 紀久夫

2000年1月
絶縁膜技術

山部, 紀久夫

1998年1月
広範囲周辺長・面積比をもつゲート付pn接合のリーク電流

山部, 紀久夫

1998年1月
不純物ドーピング

山部, 紀久夫

1998年1月
絶縁薄膜

山部, 紀久夫

1998年1月

講演・口頭発表等

Unique behavior of F-centers in high-k Hf-based oxides

Umezawa, N, Shiraishi, K, Ohno, T, Boero, M, Watanabe, H, Chikyow, T, Torii, K, Yamabe, K, Yamada, K, Nara, Y

23rd International Conference on Defects in Semiconductors
Charge trapping by oxygen-related defects in HfO2-based high-k gate dielectrics

Yamabe, K, Goto, M, Higuchi, K, Uedono, A, Shiraishi, K, Miyazaki, S, Torii, K, Boero, M, Chikyow, T, Yamasaki, S, Kitajima, H, Yamada, K, Arikado, T

43rd Annual IEEE International Reliability Physics Symposium
Transient capacitance in metal-oxide-semiconductor structures with stacked gate dielectrics

Goto, M, Higuchi, K, Torii, K, Hasunuma, R, Yamabe, K

International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-4)
Characterization of Hf0.3Al0.7Ox fabricated by atomic-layer-deposition technique using monoenergetic positron beams

Uedono, A, Goto, M, Higuchi, K, Shiraishi, K, Yamabe, K, Kitajima, H, Mitsuhashi, R, Horiuchi, A, Torii, K, Arikado, T, Suzuki, R, Ohdaira, T, Yamada, K

International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-4)
Nommiformity in ultrathin SiO2 on Si(111) characterized by conductive atomic force microscopy

Hasunuma, R, Okamoto, J, Tokuda, N, Yamabe, K

International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-4)
Point defects in thin HfAIO(x) films probed by monoenergetic positron beams

Uedono, A, Mitsuhashi, R, Horiuchi, A, Torii, K, Yamabe, K, Yamada, K, Suzuki, R, Ohdaira, T, Mikado, T

Symposium on Fundamentals of Novel Oxide/Semiconductor Interfaces held at the 2003 MRS Fall Meeting
Fabrication of Cu nanowires along atomic step edge lines on Si(111) substrates

Tokuda, N, Watanabe, H, Hojo, D, Yamasaki, S, Miki, K, Yamabe, K

7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures
A long-term reliability of thermal oxides grown on n-type 4H-SiC wafer

Senzaki, J, Goto, M, Kojima, K, Yamabe, K, Fukuda, K

10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003)
Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films during Electrical Stress Application

Hasunuma, Ryu, Tamura, Chihiro, Nomura, Tsuyoshi, Kikuchi, Yuuki, Ohmori, Kenji, Sato, Motoyuki, Uedono, Akira, Chikyow, Toyohiro, Shiraishi, Kenji, Yamada, Keisaku, Yamabe, Kikuo

IEEE International Electron Devices Meeting (IEDM 2009)
Characterization of Threshold Voltage Shift by Negative Bias Temperature Stress in HfSiOx Films

Tamura, Chihiro, Hayashia, Tomohiro, Kikuchi, Yuuki, Ohmori, Kenji, Hasunuma, Ryu, Yamabe, Kikuo

Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics held at the 215th ECS Meeting
Suppression of Leakage Current of Deposited SiO2 with Bandgap Increasing by High Temperature Annealing

Sometani, M, Hasunuma, R, Ogino, M, Kuribayashi, H, Sugahara, Y, Yamabe, K

Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics held at the 215th ECS Meeting
2-D Roughening of SiO2 Thermally Grown on Atomically Flat Si Surface

Yamabe, K, Ohsawa, K, Hayashi, Y, Hasunuma, R

Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics held at the 215th ECS Meeting 招待有り
Roughness Increase on Surface and Interface of SiO2 Grown on Atomically Flat Si(111) Terrace

Ohsawa, Keichiro, Hayashi, Yusuke, Hasunuma, Ryu, Yamabe, Kikuo

International Workshop on Dielectric Thin Films for Future ULSI Devices
Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing

Sometani, Mitsuru, Hasunuma, Ryu, Ogino, Masaaki, Kuribayashi, Hitoshi, Sugahara, Yoshiyuki, Yamabe, Kikuo

International Workshop on Dielectric Thin Films for Future ULSI Devices
Vestiges of Multiple Progressive Dielectric Breakdown on HfSiON Surfaces

Hayashi, Tomohiro, Tamura, Chihiro, Sato, Motoyuki, Hasunuma, Ryu, Yamabe, Kikuo

International Workshop on Dielectric Thin Films for Future ULSI Devices
Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films

Tamura, Chihiro, Hayashi, Tomohiro, Kikuchi, Yuuki, Ohmori, Kenji, Hasunuma, Ryu, Yamabe, Kikuo

International Workshop on Dielectric Thin Films for Future ULSI Devices
Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack

Chen, Jun, Sekiguchi, Takashi, Fukata, Naoki, Takase, Masami, Hasunuma, Ryu, Yamabe, Kikuo, Sato, Motoyuki, Nara, Yasuo, Yamada, Keisaku, Chikyo, Toyohiro

International Conference on Solid State Devices and Materials
Flattening of oxidized diamond (111) surfaces with H2SO4/H2O2 solutions

Tokuda, Norio, Takeuchi, Daisuke, Ri, Sung-Gi, Umezawa, Hitoshi, Yamabe, Kikuo, Okushi, Hideyo, Yamasaki, Satoshi

2nd International Conference on New Diamond and Nano Carbons
Roughening of atomically flat diamond (111) surfaces by a hot HNO3/H2SO4 solution

Tokuda, Norio, Umezawa, Hitoshi, Ri, Sung-Gi, Yamabe, Kikuo, Okushi, Hideyo, Yamasaki, Satoshi

International Conference on New Diamond and Nano Carbons
Comprehensive analysis of positive and negative bias temperature instabilities in high-k/metal gate stack metal-oxide-silicon field effect transistors with equivalent oxide thickness scaling to sub-1 nm

Sato, Motoyuki, Yamabe, Kikuo, Shiraishi, Kenji, Miyazaki, Seiichi, Yamada, Keisaku, Tamura, Chihiro, Hasunuma, Ryu, Inumiya, Seiji, Aoyama, Takayuki, Nara, Yasuo, Ohji, Yuzuru

International Conference on Solid State Devices and Materials

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所属学協会

共同研究・競争的資金等の研究課題

半導体表面物性、ナノ構造制御技術

科学技術振興調整費による中核的研究拠点（ＣＯＥ）育成 2002年 - 2007年
ガラス基板上の極薄結晶シリコン膜TFTのCu汚染に関する研究

企業からの受託研究 2001年 - 2005年3月
超高集積回路における絶縁膜技術

2003年
金属酸化物の電気伝導および信頼性に関する共同研究

企業からの受託研究 2003年
高信頼性シリコン酸化膜実現に関する共同研究

国内共同研究 1999年 - 2000年
シリコン酸化膜中の金属微量汚染制御に関する研究開発

企業からの受託研究 1999年 - 2000年
金属酸化物薄膜形成プロセス技術と評価