河村裕一 (Yuichi Kawamura) - マイポータル - researchmap

基本情報

所属: 大阪府立大学大学院工学研究科教授
: 地域連携研究機構

学位: 博士(理学)

J-GLOBAL ID: 200901024891540781
researchmap会員ID: 1000186173

研究キーワード

4

研究分野

2

学歴

4

受賞

1

2001年

発明協会長賞

MISC

190

InAsSbN quantum well laser diodes operating at 2 μm wavelength region on InP substrates

Jpn. J. Appl. Phys. 44(33-36) L1112-L1114 2005年
Lasing characteristic of InGaAsSbN quantum well laser diodes grown on InP substrates

Jpn. J. Appl. Phys vol.44, 8A, p.6000-60 2005年
Electroluminescence properties of InGaAsSbN quantum well diodes grown by molecular beam epitaxy.

J. Vac. Soe. Japan 48, No.3 p.28-31 2005年
Annealing effects on electroluminescence and laser operation of InGaAsSbN quantum well diodes grown on InP substrates

Y Kawamura, T Nakagawa, N Inoue

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43(10A) L1320-L1322 2004年10月
2.43 mu m light emission of InGaAsSbN quantum well diodes grown on InP substrates

Y Kawamura, T Nakagawa, M Amano, K Ouchi, N Inoue

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43(4B) L530-L532 2004年4月
Field dependence of electron spin relaxation during transport in GaAs

Y Sato, Y Takahashi, Y Kawamura, H Kawaguchi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43(2A) L230-L232 2004年2月
Photoreflectance characterization of ordered/disordered GaAs0.5Sb0.5 layers grown on InP substrates by molecular beam epitaxy

Y Kawamura, M Amano, K Ouchi, N Inoue

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42(7A) 4288-4289 2003年7月
Optical control of InGaAs/GaAsSb type II resonant tunneling diodes

The 11th international conference of Modulated Semiconductor Conferenve 2003年
Properties of IGaAs/GaAssb typeⅡ multiple quantum well structures grown on (111)B InP substrates by molecular beam epitaxy

Journal of Crystal Growth 243, 8 2002年
Electrolumineseence of InGaAs/GaAssb type Ⅱ MOW light emitting dioder grown on (111)B InP by molecular beam epitaxy

Japanese Journal of Applied physics 41, 4515 2002年
Band-gap change in ordered/disordered GaAssb layers grown on (011) and (111)B InP substrates

Japanese Journal of Applied physics 41, L447 2002年
InGaAs/GaAssb/InAlAs asymmetric typeⅡ quantum well strnctures lattice-matched to Inp grown by molecular beam epitaxy

Journal of Crystal Growth 237, 1499 2002年
Molecular beam eptaxial grownth and characterization of GaAssb layers on (111)B InP snbstrates

Japanese Journal of Applied physics 41, 204 2002年
Properties of IGaAs/GaAssb typeⅡ multiple quantum well structures grown on (111)B InP substrates by molecular beam epitaxy

Journal of Crystal Growth 243, 8 2002年
Electrolumineseence of InGaAs/GaAssb type Ⅱ MOW light emitting dioder grown on (111)B InP by molecular beam epitaxy

Japanese Journal of Applied physics 41, 4515 2002年
Band-gap change in ordered/disordered GaAssb layers grown on (011) and (111)B InP substrates

Japanese Journal of Applied physics 41, L447 2002年
InGaAs/GaAssb/InAlAs asymmetric typeⅡ quantum well strnctures lattice-matched to Inp grown by molecular beam epitaxy

Journal of Crystal Growth 237, 1499 2002年
Molecular beam eptaxial grownth and characterization of GaAssb layers on (111)B InP snbstrates

Japanese Journal of Applied physics 41, 204 2002年
Work function of GaAs (001) surface obtained by the electron counting model

N Inoue, T Higashino, K Tanahashi, Y Kawamura

JOURNAL OF CRYSTAL GROWTH 227 123-126 2001年7月
Intersubband transition in doped and undoped quantum well structures of InGaAs/InAlAs

Journal of Nonlinear Optical physics and Materials 10, 337 2001年

もっとみる

書籍等出版物

2

ナノ構造材料ハンドブック

1997年
Handbook of Nanophuse Materials

Marcel Dekker Inc 1997年

所属学協会

4

共同研究・競争的資金等の研究課題

4

産業財産権

4