2004年7月15日
Low temperature preparation of ZnO by a nearby vaporizing chemical vapor deposition method
Journal of Crystal Growth
- ,
- 巻
- 268
- 号
- 1-2
- 開始ページ
- 174
- 終了ページ
- 177
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.jcrysgro.2004.05.006
ZnO films were prepared by a nearby vaporizing chemical vapor deposition (CVD) method where the substrate locates over the surface of source material, bis(2,4-pentanedionato)zinc, with the separation distance of 2.5mm. Crystalline ZnO was easily prepared by this CVD method at low substrate temperatures ranging from 100°C to 300°C. The highest preferred orientation to the c-axis was obtained at the substrate temperature of 225°C. © 2004 Elsevier B.V. All rights reserved.
- リンク情報
-
- DOI
- https://doi.org/10.1016/j.jcrysgro.2004.05.006
- URL
- http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=2942735500&origin=inward
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=2942735500&origin=inward
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=2942735500&origin=inward
- ID情報
-
- DOI : 10.1016/j.jcrysgro.2004.05.006
- ISSN : 0022-0248
- SCOPUS ID : 2942735500