論文

査読有り 筆頭著者 責任著者
2004年7月15日

Low temperature preparation of ZnO by a nearby vaporizing chemical vapor deposition method

Journal of Crystal Growth
  • Junichi Nishino
  • ,
  • Yoshio Nosaka

268
1-2
開始ページ
174
終了ページ
177
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.jcrysgro.2004.05.006

ZnO films were prepared by a nearby vaporizing chemical vapor deposition (CVD) method where the substrate locates over the surface of source material, bis(2,4-pentanedionato)zinc, with the separation distance of 2.5mm. Crystalline ZnO was easily prepared by this CVD method at low substrate temperatures ranging from 100°C to 300°C. The highest preferred orientation to the c-axis was obtained at the substrate temperature of 225°C. © 2004 Elsevier B.V. All rights reserved.

リンク情報
DOI
https://doi.org/10.1016/j.jcrysgro.2004.05.006
URL
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=2942735500&origin=inward
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=2942735500&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=2942735500&origin=inward
ID情報
  • DOI : 10.1016/j.jcrysgro.2004.05.006
  • ISSN : 0022-0248
  • SCOPUS ID : 2942735500

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