The formation of TiO2 films by a modification of chemical vapor deposition (CVD), in which vaporization takes place by radiant heat from the substrate without carrier gas, was analyzed. The substrate was heated by a hot Al suscepter with a resistance cartridge heater. The deposition rate was calculated from the thickness and the time for the film grown to ca. 50 nm. It was shown that the heat conductivity of source materials affected the deposition modes. The results show that the deposition rate increases exponentially from 0.13 nm min-1 to 8 nm min-1 with increasing the substrate temperature when PTFE vessel is used.