論文

査読有り
2012年7月

Anodizing of aluminum in sulfuric acid and oxalic acid solutions with percarboxylic acid-based additive

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
  • Mitsutaka Yoshimoto
  • ,
  • Yasuhiro Morizono
  • ,
  • Sadahiro Tsurekawa
  • ,
  • Tomoyuki Baba

120
1403
開始ページ
276
終了ページ
279
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.2109/jcersj2.120.276
出版者・発行元
CERAMIC SOC JAPAN-NIPPON SERAMIKKUSU KYOKAI

Anodic oxidation of a pure Al plate was carried out in aqueous solutions containing sulfuric acid (H2SO4), oxalic acid (H2C2O4) and a percarboxylic acid-based additive at temperatures between 273 and 293 K for 0.6 to 9 ks under a constant current density of 300 A.m(-2) (3 A.dm(-2)). The microstructures and the mechanical properties of the obtained anodic oxide film were investigated to determine the optimum electrochemical condition. In the H2SO4 + additive bath, the film with a maximum thickness of approximately 100 mu m was formed at 293 K for 7.2 ks. However, the surface hardness of the film decreased with increasing processing time and film thickness. To enhance the film hardness, the Al plate was anodized in the H2SO4 + H2C2O4 + additive bath at lower temperatures, which resulted in higher Vickers hardness of 400-500 and excellent wear resistance for the thick film formed at 278 K for 7.2 ks. The film formed at 278 K in the H2SO4 + H2C2O4 + additive bath had a typical cell structure with a nano-sized pore at the center of each cell. Compared with the film formed in the H2SO4 bath, the cells were almost uniform in size and the pore size in the cell was smaller. In addition, the Occupation ratio of the pores in unit area of the film formed in the H2SO4 + H2C2O4 + additive bath was smaller than that of the film formed in the H2SO4 bath. Such microstructural features are thought to be responsible for the high hardness of the anodic oxide thick film. (C) 2012 The Ceramic Society of Japan. All rights reserved

Web of Science ® 被引用回数 : 11

リンク情報
DOI
https://doi.org/10.2109/jcersj2.120.276
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000306533500004&DestApp=WOS_CPL
ID情報
  • DOI : 10.2109/jcersj2.120.276
  • ISSN : 1882-0743
  • eISSN : 1348-6535
  • Web of Science ID : WOS:000306533500004

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