YOSHIMURA Masashi

J-GLOBAL         Last updated: Jul 18, 2019 at 02:41
 
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Name
YOSHIMURA Masashi
Affiliation
Osaka University
Section
Institute of Laser Engineering
Job title
Professor
Degree
Ph.D. in Engineering(Osaka University)
Research funding number
60314382

Research Areas

 
 

Academic & Professional Experience

 
1999
   
 
- Research Associate, Graduate School of Engineering, Osaka University
 

Education

 
 
 - 
1999
Graduate School, Division of Engineering, Osaka University
 
 
 - 
1999
Graduate School, Division of Engineering, Osaka University
 
 
 - 
1996
Graduate School, Division of Engineering, Osaka University
 
 
 - 
1999
Graduate School, Division of Engineering, Osaka University
 
 
 - 
1996
Graduate School, Division of Engineering, Osaka University
 

Awards & Honors

 
2000
JASP Award for the Young Scientist
 
2001
Award of the Laser Society of Japan
 
2005
Prize of Laser Engineering; Medal of Excellent Review Paper
 
2007
Prizes for Science and Technology(Research Category), The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology
 
2005
Prize of Laser Engineering; Medal of Excellent Review Paper
 

Published Papers

 
Growth of thick GaN films using gallium hydride
M. Imade, F. Kawamura, M. Kawahara, M. Yoshimura, Y. Mori, and T. Sasaki
6th International Conference on Nitride Semiconductors (ICNS6)      Sep 2005   [Refereed]
Growth of GaN single crystals by GaH-VPE method
M. Imade, F. Kawamura, M. Kawahara, M. Yoshimura, Y. Mori, and T. Sasaki
First International Symposium on Growth of III-Nitrides (ISGN1)      Jun 2006   [Refereed]
Examination of the effects of H2 concentration in the reactant gas on the GaN growth in GaH-VPE method
M. Imade, F. Kawamura, M. Kawahara, M. Yoshimura, Y. Kitaoka, H. Mori, T. Sasaki
International Workshop on Nitride Semiconductors 2006 (IWN2006)      Oct 2006   [Refereed]
Growth of GaN crystals by gallium hydride vapor phase epitaxy method
M. Imade, N. Yamada, Y. Kitano, F. Kawamura, M. Yoshimura, Y. Kitaoka, Y. Mori, and T. Sasaki
26th Electronic Materials Symposium (EMS-26)      Jul 2007   [Refereed]
Increase in the growth rate of GaN single crystals grown by gallium hydride vapor phase epitaxy method
N. Yamada, M. Imade, Y. Kitano, F. Kawamura, M. Yoshimura, Y. Kitaoka, Y. Mori, and T. Sasaki
26th Electronic Materials Symposium (EMS-26)      Jul 2007   [Refereed]

Misc

 
Efficient stimulated Brillouin scattering in the organic crystal deuterated L-arginine phosphate monohydrate
Journal of Optical Society of America B   15(15) 446   1998
Japanese Journal of Applied Physics   38(2A) L129-L131   1999
Masashi YOSHIMURA, Yusuke MORI, Takatomo SASAKI
The Review of Laser Engineering   27(8) 519-524   1999
Journal of Crystal Growth   198/199(Pt.1) 560-563   1999

Works

 
CLBO Crystal Improvement
2005
CLBO Crystal Improvement
2005
CLBO Crystal Improvement
2007

Research Grants & Projects

 
Development of nonlinear optical borate crystals
Development of all-solid-state ultraviolet laser by nonlinear optical crystals

Patents

 
Method and Apparatus for Growth High Quality Single Crystal
WO00/71786
NONLINEAR OPTICAL CRYSTAL
WO00/08524
Wavelength Conversion Crystal and Method for Generating Laser Beam, and Apparatus for Generating Laser Beam
PCT/JP99/01593
(US)6,843,849
特許3636200