2016年8月5日
Stacked integration of MEMS on LSI
Micromachines
- ,
- 巻
- 7
- 号
- 8
- 開始ページ
- 137
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 記事・総説・解説・論説等(学術雑誌)
- DOI
- 10.3390/mi7080137
- 出版者・発行元
- MDPI AG
Two stacked integration methods have been developed to enable advanced microsystems of microelectromechanical systems (MEMS) on large scale integration (LSI). One is a wafer level transfer of MEMS fabricated on a carrier wafer to a LSI wafer. The other is the use of electrical interconnections using through-Si vias from the structure of a MEMS wafer on a LSI wafer. The wafer level transfer methods are categorized to film transfer, device transfer connectivity last, and immediate connectivity at device transfer. Applications of these transfer methods are film bulk acoustic resonator (FBAR) on LSI, lead zirconate titanate (Pb(Zr,Ti)O3) (PZT) MEMS switch on LSI, and surface acoustic wave (SAW) resonators on LSI using respective methods. A selective transfer process was developed for multiple SAWfilters on LSI. Tactile sensors and active matrix electron emitters for massive parallel electron beam lithography were developed using the through-Si vias.
- リンク情報
- ID情報
-
- DOI : 10.3390/mi7080137
- ISSN : 2072-666X
- SCOPUS ID : 84984830284