IZUMI Katsutoshi

J-GLOBAL         Last updated: Jan 9, 2013 at 16:32
 
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Name
IZUMI Katsutoshi
Degree
(BLANK)(Tokyo Institute of Technology)

Research Areas

 
 

Academic & Professional Experience

 
 
   
 
Osaka Prefecture University Industry-University Cooperation Organization, Frontier Science Innovation Center
 
1972
 - 
1983
Nippon Telegraph and Telephone Public Corporation, Researcher
 
1983
 - 
1992
Nippon Telegraph and Telephone Corporation, Senior Researcher
 
1992
 - 
1996
Nippon Telegraph and Telephone Corporation, Executive Manager
 
1996
 - 
1998
Nippon Telegraph and Telephone Corporation, Executive Project Manager
 

Education

 
 
 - 
1972
Graduate School, Division of Engineering, Nagoya Institute of Technology
 
 
 - 
1970
Faculty of Engineering, Nagoya Institute of Technology
 

Awards & Honors

 
2001
IEEE Daniel E. Noble Award
 

Misc

 
High Speed C-MOS IC Using Buried SiO2 Layers Formed by Ion Implantation(共著)
Japanese Journal of Applied Physics   19(別冊19-1) 151-154   1980
Historical Overview of SIMOX
Vacuum   42(5) 333-340   1991
Total-Dose Effects of Gamma-Ray Irradiation on CMOS/SIMOX Devices(共著)
IEEE Circuits and Devices Magazine   3(6) 21-26   1987
OYOBUTSURI   58(8) 1202-1211   1989

Books etc

 
Current Status of SIMOX Technology-High-Quality ITOX-SIMOX Wafers and Their Application to Quarter-Micron CMOS LSIs-
Proceeding of the 6th Int'l Symp. on ULSI Science and Technology, Electrochemical Society   1997   

Works

 
Japan Patent No. 1126170 "Semiconductor Device and its Method of Fabrication"
1982
U. S. Patent No. 5658809"SOI Substrate and its Method of Production"
1997
U. S. Patent No. 504004"Semiconductor Device for Power Electronics
1991
Japan Patent No. 1942779"Fabrication Method of Semiconductor Device"
1995
Japan Patent No. 2036163"Semiconductor Device"
1996

Research Grants & Projects

 
Study on Electron-Photon Merged Devices
Study on Improvement of SOI Substrate Quality
Design Study on LSI Based on SOI Technology
Study on Electron-Photon Merged Devices
Study on Improvement of SOI Substrate Quality