Katsutoshi Izumi - My portal - researchmap

Profile Information

Degree: (BLANK)(Tokyo Institute of Technology)

J-GLOBAL ID: 200901004615251996
researchmap Member ID: 1000285837

External link: http://tokachi.riast.osakafu-u.ac.jp/%7Esentan3/home.html

Research Interests

5

Research Areas

3

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /
Natural sciences / Semiconductors, optical and atomic physics /

Research History

15

1999

- 大阪府立大学教授
1999

- Osaka prefecture University, Professor
1997 - 1998

Nagoya Institute of Technology
1997 - 1998

Nagoya Institute of Technology, Part-Time Instructor
1996 - 1998

日本電信電話株式会社プロジェクト・リーダ主席研究員
1996 - 1998

Nippon Telegraph and Telephone Corporation, Executive Project Manager
1998

- 名古屋工業大学客員教授
1998

- Nagoya Institute of Technology, Guest professor
1992 - 1996

日本電信電話株式会社研究部長
1992 - 1996

Nippon Telegraph and Telephone Corporation, Executive Manager
1983 - 1992

日本電信電話株式会社主幹研究員
1983 - 1992

Nippon Telegraph and Telephone Corporation, Senior Researcher
1972 - 1983

日本電信電話公社研究員
1972 - 1983

Nippon Telegraph and Telephone Public Corporation, Researcher
Osaka Prefecture University Industry-University Cooperation Organization, Frontier Science Innovation Center

Education

4

- 1972

Nagoya Institute of Technology
- 1972

Graduate School, Division of Engineering, Nagoya Institute of Technology
- 1970

Faculty of Engineering, Nagoya Institute of Technology
- 1970

Faculty of Engineering, Nagoya Institute of Technology

Awards

6

Misc.

9

Investigation on High-Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers(共著)

Journal of Electrochemical Society, 143(1) 244-251, 1996
TRANSPORT-PROPERTIES OF SILICON NANOSTRUCTURES FABRICATED ON SIMOX SUBSTRATES

K MURASE, Y TAKAHASHI, Y NAKAJIMA, H NAMATSU, M NAGASE, K KURIHARA, K IWADATE, S HORIGUCHI, M TABE, K IZUMI

MICROELECTRONIC ENGINEERING, 28(1-4) 399-405, Jun, 1995
Buried Oxide Layers Formed by Low-Dose Oxygen Implantation(共著)

Journal of Materials Research, 7(4) 788-790, 1992
HISTORICAL OVERVIEW OF SIMOX

K IZUMI

VACUUM, 42(5-6) 333-340, 1991
SIMOX技術の素子分離への応用

応用物理, 58(8) 1202-1211, 1989
Application of SIMOX Technology to Devices Isolation

OYOBUTSURI, 58(8) 1202-1211, 1989
Total-Dose Effects of Gamma-Ray Irradiation on CMOS/SIMOX Devices(共著)

IEEE Circuits and Devices Magazine, 3(6) 21-26, 1987
HIGH-SPEED C-MOS IC USING BURIED SIO2 LAYERS FORMED BY ION-IMPLANTATION

K IZUMI, M DOKEN, H ARIYOSHI

JAPANESE JOURNAL OF APPLIED PHYSICS, 19(別冊19-1) 151-154, 1980
C. M. O. S. Devices Fabricated on Buried SiO₂ Layers Formed by Oxygen Implantation into Silicon(共著)

Electronics Letters, 14(18) 593-594, 1978

Books and Other Publications

1

Current Status of SIMOX Technology-High-Quality ITOX-SIMOX Wafers and Their Application to Quarter-Micron CMOS LSIs-

Proceeding of the 6th Int'l Symp. on ULSI Science and Technology, Electrochemical Society, 1997

Professional Memberships

6

Works

20

Research Projects

8

電子-光融合デバイスの研究

先進技術型研究開発助成金, 1999
SiC-on-Insulator構造基板の実用化
電子-光融合デバイスの研究
SOIによるLSI設計法の研究
SOI基板高品質化の研究
Design Study on LSI Based on SOI Technology
Study on Improvement of SOI Substrate Quality
Study on Electron-Photon Merged Devices