Mar 1, 1995
Negative-ion implantation technique
Nuclear Inst. and Methods in Physics Research, B
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- Volume
- 96
- Number
- 1-2
- First page
- 7
- Last page
- 12
- Language
- English
- Publishing type
- DOI
- 10.1016/0168-583X(94)00444-7
Negative-ion implantation is a promising technique for charging-free implantation for the forthcoming ULSI fabrication, in which the water charging by positive-ion implantation will become a troublesome problem even with an electron shower. The negative-ion implantation technique remarkably ameliorates such a charging problem since the incoming negative charge of implanted negative ions is easily balanced by the outgoing negative charge of a part of secondary electrons. Thus, the surface charging voltage is maintained to within about ± 10 V for isolated conducting materials and insulators, and is free from space and time fluctuations. A high-current negative-ion source and a medium current negative-ion implanter developed for this technique are described with the design concepts. In addition, the fundamental measurements of interactions between the negative-ion beam and the gas/solid are also described. © 1995.
- Link information
- ID information
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- DOI : 10.1016/0168-583X(94)00444-7
- ISSN : 0168-583X
- SCOPUS ID : 0001878342