Misc.

1996

Yield Measurement of Secondary Electrons Emitted from Silicon Dioxide Film in Negative-Ion Bombardment.

Japanese Journal of Applied Physics
  • Toyota Yoshitaka
  • ,
  • Tsuji Hiroshi
  • ,
  • Gotoh Yasuhito
  • ,
  • Ishikawa Junzo

Volume
35
Number
9A
First page
4785
Last page
4788
Language
English
Publishing type
DOI
10.1143/JJAP.35.4785
Publisher
The Japan Society of Applied Physics

The yield of secondary electrons emitted from insulating materials subjected to negative-ion bombardment was studied. In general, such measurements for insulating materials are difficult because surface charging due to ion implantation makes the apparent yield unity. We used silicon dioxide (SiO2) film and a small ion current for the yield measurements. As a result, charge compensation due to the leakage current minimized the surface charging and the true yield was obtained. The experimental results showed that secondary electrons emitted due to negative-ion bombardment consist of electrons due to both kinetic emission and detachment from negative ions. In addition, it was found that the yield depends on the ion species. It was concluded that the same tendencies as those for negative-ion-implanted conductive materials are observed.

Link information
DOI
https://doi.org/10.1143/JJAP.35.4785
CiNii Articles
http://ci.nii.ac.jp/naid/130004522856
URL
https://jlc.jst.go.jp/DN/JALC/00042372004?from=CiNii
ID information
  • DOI : 10.1143/JJAP.35.4785
  • ISSN : 0021-4922
  • CiNii Articles ID : 130004522856

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