1998年
原子層積層法によるBaフェライト薄膜の作製 -下地層による結晶性の制御-
日本応用磁気学会誌
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- 巻
- 22
- 号
- 4-2
- 開始ページ
- 481
- 終了ページ
- 484
- 記述言語
- 日本語
- 掲載種別
- DOI
- 10.3379/jmsjmag.22.481
- 出版者・発行元
- The Magnetics Society of Japan
In order to obtain a hexagonal barium ferrite (BaM) film with large saturation magnetization, we attempted to reduce the thickness of a ZnO underlayer and to deposit BaM film on underlayers of various materials such as α-Fe2O3, amorphous barium ferrite (a-BaM), amorphous BaFe6O10 (a-BaFe6O10), and ZnFe2O4. The following results were obtained: (1) A ZnO underlayer less than 10 nm thick significantly degraded the c-axis orientation of the BaM films. (2) A BaM film with c-axis orientation was obtained only on ZnO, a-BaM/ZnO, and ZnFe2O4 underlayers. In particular, a film deposited on a (111)-oriented ZnFe2O4 underlayer had excellent c-axis orientation and magnetic properties. (3) The saturation magnetizations of films deposited on the various underlayers had low values below 260 emu/cc, and could not be increased by reducing the thickness of the ZnO underlayer or by depositing the film on an underlayer that did not contain ZnO.
- リンク情報
- ID情報
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- DOI : 10.3379/jmsjmag.22.481
- ISSN : 0285-0192
- CiNii Articles ID : 110002811463
- CiNii Books ID : AN0031390X