2015年5月
Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
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- 巻
- 51
- 号
- 3
- 開始ページ
- 2415
- 終了ページ
- 2422
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1109/TIA.2014.2369818
- 出版者・発行元
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are promising materials for next-generation power devices. We have fabricated a normally on GaN-based high-electron-mobility transistor (GaN HEMT) for power electronic converters. In this paper, the current collapse phenomena, which are distinctive characteristics of GaN devices, are evaluated in detail for several voltages with two switching frequencies. We also evaluate a gate drive circuit that we previously proposed for the normally on GaN HEMT with a single positive voltage source. We construct and test prototype circuits for a boost-type dc-dc converter and a single-phase full-bridge inverter with a gate drive circuit. The problems to be solved for the normally on GaN HEMT, which has a (static) voltage rating of over 600 V, are clarified on the basis of the experimental results.
- リンク情報
- ID情報
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- DOI : 10.1109/TIA.2014.2369818
- ISSN : 0093-9994
- eISSN : 1939-9367
- Web of Science ID : WOS:000354944600051