SATO Taketomo

J-GLOBAL         Last updated: Nov 4, 2019 at 14:32
 
Avatar
Name
SATO Taketomo
URL
http://hydrogen.rciqe.hokudai.ac.jp/~taketomo/home/index.html
Affiliation
Hokkaido University
Section
Research Center for Integrated Quantum Electronics, Research Center for Integrated Quantum Electronics
Job title
Associate Professor
ORCID ID
0000-0001-5032-6947

Research Areas

 
 

Published Papers

 
Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices
Fumimasa Horikiri, Noboru Fukuhara, Hiroshi Ohta, Naomi Asai, Yoshinobu Narita, Takehiro Yoshida, Tomoyoshi Mishima, Masachika Toguchi, Kazuki Miwa, Taketomo Sato
IEEE Transactions on Semiconductor Manufacturing   32(4) 489-495   Oct 2019   [Refereed]
Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions
Taketomo Sato, Masachika Toguchi, Yuto Komatsu, Keisuke Uemura
IEEE Transactions on Semiconductor Manufacturing   32(4) 483-488   Aug 2019   [Refereed]
Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect
Masachika Toguchi, Kazuki Miwa, and Taketomo Sato
Journal of The Electrochemical Society   166(12) H510-H512   Jul 2019   [Refereed]
Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82– ions
Masachika Toguchi, Kazuki Miwa, Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Takehiro Yoshida, and Taketomo Sato
Applied Physics Express   12 066504-1-066504-4   May 2019   [Refereed]
Keisuke Uemura, Manato Deki, Yoshio Honda, Hiroshi Amano and Taketomo Sato
Japanese Journal of Applied Physics   58(SC) SCCD20-1-SCCD20-6   May 2019   [Refereed]
Horikiri Fumimasa, Fukuhara Noboru, Ohta Hiroshi, Asai Naomi, Narita Yoshinobu, Yoshida Takehiro, Mishima Tomoyoshi, Toguchi Masachika, Miwa Kazuki, Sato Taketomo
APPLIED PHYSICS EXPRESS   12(3)    Mar 2019   [Refereed]
Matsumoto Satoru, Toguchi Masachika, Takeda Kentaro, Narita Tetsuo, Kachi Tetsu, Sato Taketomo
JAPANESE JOURNAL OF APPLIED PHYSICS   57(12)    Dec 2018   [Refereed]
佐藤威友
ケミカルエンジニヤリング   63(6) 399‐405   Jun 2018   [Invited]
植村圭佑, 松本悟, 渡久地政周, 伊藤圭亮, 佐藤威友, 佐藤威友
電子情報通信学会技術研究報告   117(331(ED2017 49-71)) 23‐26   Nov 2017
Kumazaki Yusuke, Uemura Keisuke, Sato Taketomo, Hashizume Tamotsu
JOURNAL OF APPLIED PHYSICS   121(18)    May 2017   [Refereed]

Books etc

 
Lateral Alignment of Epitaxial Quantum Dots
HASEGAWA Hideki, SATO Taketomo, KASAI Seiya (Part:Contributor, 24 Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks)
Springer   2007   

Conference Activities & Talks

 
Wet Etching of III-V Compound Semiconductors – Focusing a Recent Topics on Nitride Semiconductors – [Invited]
Taketomo Sato, Masachika Toguchi
18 Sep 2019   
Fabrication GaN nanowires by electrodeless photo-assisted electrochemical etching and wet etching
Michihito Shimauchi, Kazuki Miwa, Masachika Toguchi, Taketomo Sato, Junichi Motohisa
18 Sep 2019   
Study on photo-electrochemical etching on high-doped n-type GaN substrates
Kazuki Miwa, Masachika Toguchi, and Taketomo Sato
18 Sep 2019   
Photo-electrochemical (PEC) etching on AlGaInN/AlGaN heterostructures (2)
Y. Komatsu, M. Toguchi, S. Saito, M. Miyoshi, and T. Sato
18 Sep 2019   
Contactless Photoelectrochemical Etching of n-GaN in K2S2O8/H3PO4 Mixed Solution
M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, T. Yoshida, and T. Sato
18 Sep 2019   
Characterization of processed n-GaN surface using an electrochemical impedance spectroscopy (2)
Kentaro Takeda, Masachika Toguchi, Taketomo Sato
18 Sep 2019   
GaN Wet Etching Process for Power and RF Devices [Invited]
F. Horikiri, N. Fukuhara, H. Ohta, N. Asai, Y. Narita, T. Yoshida, T. Mishima, M. Toguchi, K. Miwa, T. Sato
2019 International Conference on Solid State Devices and Materials   5 Sep 2019   
Characterization of processing-damage induced on n-GaN surface utilizing electrochemical methods
Kentaro Takeda, Masachika Toguchi, Taketomo Sato
13th Topical Workshop on Heterostructure Microelectronics   26 Aug 2019   
Photo-electrochemical etching optimized for high-doped n-type GaN
Kazuki Miwa, Masachika Toguchi, Taketomo Sato
13th Topical Workshop on Heterostructure Microelectronics   26 Aug 2019   
GaN Wet Etching Process [Invited]
Fumimasa Horikiri, Noboru Fukuhara, Hiroshi Ohta, Naomi Asai, Yoshinobu Narita, Takehiro Yoshida, Tomoyoshi Mishima, Masachika Toguchi, Kazuki Miwa, and Taketomo Sato
13th Topical Workshop on Heterostructure Microelectronics   26 Aug 2019   

Research Grants & Projects

 
Interface control of heterojunctions including singularity structures for advanced electron devices
Ministry of Education, Culture, Sports, Science and Technology: Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
Project Year: Jun 2016 - Mar 2021    Investigator(s): Tamotsu HASHIZUME
Low-damage Processing of Nitride Semiconductors Based on Self-stoping Oxdization and Transistor Applications
Ministry of Education, Culture, Sports, Science and Technology: Grant-in-Aid for Scientific Research (B)
Project Year: Apr 2017 - Mar 2020    Investigator(s): SATO Taketomo
窒化物半導体周期的ナノ構造を基盤とした可視光応答型光触媒の開発と人工光合成応用
Ministry of Education, Culture, Sports, Science and Technology: Grant-in-Aid for Challenging Exploratory Research
Project Year: Apr 2015 - Mar 2018    Investigator(s): SATO Taketomo
Nanoscale control of nitride semiconductor surface using low-damaged process for high-sensitive chemical sensors
Ministry of Education, Culture, Sports, Science and Technology: Grant-in-Aid for Scientific Research (B)
Project Year: Apr 2013 - Mar 2016    Investigator(s): SATO Taketomo
Exploration of novel materials for photochemical water splitting based on semiconductor nanowires and nanostructures
Ministry of Education, Culture, Sports, Science and Technology: Grant-in-Aid for Challenging Exploratory Research
Project Year: 2012 - 2014    Investigator(s): Junichi MOTOHISA

Patents

 
特許公開2011-226800