西澤秀明 (Hideaki Nishizawa) - マイポータル

基本情報

所属: 九州工業大学先端研究・社会連携本部マイクロ化総合技術センター特任准教授
: (兼任)大学院情報工学研究院特任准教授 (アドバイザリーボード)

学位: 博士（工学）(東京工業大学)

J-GLOBAL ID: 200901059419649972
researchmap会員ID: 5000085842

研究キーワード

研究分野

受賞

2015年

日本機械学会賞(論文), 革新的概念に基づく超高効率加工技術の構築（ダイラタンシー・パッド工具と液中加工システムによるSiC基板の効果的加工プロセスの確立）, 日本機械学会

土肥俊郎, 瀬下清, 山崎努, 大坪正徳, 西澤秀明, 村上幸, 市川大造, 中村由夫, 宮下忠一, 川村佳秀, 高木正孝, 柏田太志, 會田英雄

論文

An efficient polishing process for silicon carbide using ion implantation method

Sho Takitani, Akiyoshi Baba, Hideaki Nishizawa, Keisuke Suzuki

Japanese Journal of Applied Physics 63(3) 038006-038006 2024年3月1日査読有り
Study on sonic-Assisted processing method for micro pattern formation on Cu film

Soma Yamamoto, Yuho Fukushige, Hideaki Nishizawa, Panart Khajornrungruang, Keisuke Suzuki

2024 1st International Conference on Robotics, Engineering, Science, and Technology, RESTCON 2024 55-58 2024年
Evaluation of Glycerol’s Adsorption on Copper by Novel Dynamic LSV System

K. Takashige, Y. Miyaji, K. Suzuki, H. Nishizawa, T. Doi

Int. Conf. Planarization/CMP Technology (ICPT) 2022. 2022年9月
Dynamic Electrochemical Measurement System “d-EC” for Fundamental CMP Study

Hideaki Nishizawa, Toshiro Doi, Kazuo Imai, Keisuke Suzuki, Hideo Aida

Int. Conf. Planarization/CMP Technology (ICPT) 2022. 2022年9月筆頭著者
WeC-2-3 Development of innovative dilatancy pad and high-speed / high-pressure polishing machine aimed for high-efficient and high-quality processing of next generation semiconductor substrates

Yamazaki Tsutomu, Seshimo Kiyoshi, Nishizawa Hideaki, Ohtsubo Masanori, Aida Hideo, Miyashita Tadakazu, Takagi Masataka, Doi Toshiro K.

Proceedings of ... JSME-IIP/ASME-ISPS Joint Conference on Micromechatronics for Information and Precision Equipment : IIP/ISPS joint MIPE 2015 "WeC-2-3-1"-"WeC-2-3-3" 2015年査読有り
WeC-2-4 PLASMA FUSION CHEMICAL MECHANICAL POLISHING OF ULTRA-HARD-TO-PROCESS MATERIALS : Basic process characteristics for GaN substrate and prospective application toward diamond substrate

OYAMA Koki, DOI Toshiro K., SANO Yasuhisa, KUROKAWA Syuhei, AIDA Hideo, KIM Seongwoo, NISHIZAWA Hideaki, WANG Chengwu, MIYASHITA Tadakazu

Proceedings of ... JSME-IIP/ASME-ISPS Joint Conference on Micromechatronics for Information and Precision Equipment : IIP/ISPS joint MIPE 2015 "WeC-2-4-1"-"WeC-2-4-3" 2015年査読有り
Study on Innovative Plasma Fusion CMP and its Application to Processing of Diamond Substrate

Hideaki Nishizawa, Koki Oyama, Toshiro Karaki Doi, Hideo Aida, Seongwoo Kim, Yasuhisa Sano, Syuhei Kurokawa, Chengwu Wang

Proc. of the International Conference on Planarization/CMP Technology 298-301 2015年査読有り
革新的概念に基づく超高効率加工技術の構築（ダイラタンシー・パッド工具と液中加工システムによるSiC基板の効果的加工プロセスの確立）

日本機械学会論文集 81(824) 14-00618 2015年査読有り
Development of Innovative Dilatancy Pad realizing Super High Efficiency and High-grade polishing of SiC Wide Band Gap Semiconductor Substrates

Proc. of the International Conference on Planarization/CMP Technology 168-173 2014年査読有り
Study on a novel CMP/P-CVM fusion processing system (type B) and its basic characteristics

K. Oyama, T. K. Doi, Y. Sano, S. Kurokawa, H. Aida, T. Miyashita, H. Nishizawa

Proc. of the International Conference on Planarization/CMP Technology 2014 142-146 2014年査読有り
Fundamental Study of Chemical–Mechanical Polishing Slurry of Cobalt Barrier Metal for the Next-Generation Interconnect Process

Hideaki Nishizawa, Haruki Nojo, Akira Isobe

Japanese Journal of Applied Physics 49(5) 05FC03-05FC03 2010年5月20日査読有り
산화막 CMP에서 패드 두께가 연마율과 연마 불균일도에 미치는 영향

Jaehyun Bae, Hyunseop Lee, Jaehong Park, Hideaki Nishizawa, Masaharu Kinoshita, Haedo Jeong

23(5) 358-363 2010年5月1日査読有り
One step Polishing Slurry for Cu-TSV Process

H. Nishizawa, J. H. Park, A Isobe

Proc. of the International Conference on Planarization/CMP Technology 325-328 2010年査読有り
Evaluation of mercaptobenzothiazole anticorrosive layer on Cu surface by spectroscopic ellipsometry

Hideaki Nishizawa, Osamu Sugiura, Yoshiyuki Matsumura, Masaharu Kinoshita

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46(5A) 2892-2894 2007年5月査読有り
Evaluation of Cu Ion Concentration Effects on Cu Etching Rate in Chemical-Mechanical Polishing Slurry

Hideaki Nishizawa, Osamu Sugiura, Yoshiyuki Matsumura, Masaharu Kinoshita

Japanese Journal of Applied Physics 46(No. 16) L379-L381 2007年4月13日査読有り
Evaluation of MBT anticorrosive layer on Cu surface for chemical-mechanical polishing application

H. Nishizawa, O. Sugiura, Y. Matsumura, M. Kinoshita

Advanced Metallization Conference 2006 (AMC 2006) 543-547 2007年査読有り
An analysis of copper surface layers for chemical-mechanical poising process with spectroscopic ellipsomtry

H Nishizawa, O Sugiura, Y Matsumura, S Haba, M Hanazono

Advanced Metallization Conference 2005 (AMC 2005) V-21 557-561 2006年査読有り
Evaluation of MBT anticorrosive layers on Cu surface by Spectroscopic Ellipsometry

H. Nishizawa, O. Sugiura, Y. Matsumura, M. Kinoshita

Proceeding of PacRiM-CMP 2005 382-386 2005年
Ellipsometry characterization of oxidized copper layers for chemical mechanical polishing process

H Nishizawa, Y Tateyama, T Saitoh

THIN SOLID FILMS 455 491-494 2004年5月査読有り
Ellipsometry Characterization of Copper Complex layers for Abrasive-Free Chemical Mechanical Polishing

T. Saitoh,H. Nishizawa, J. Amanokura, M. Hanazono

Chemical Mechanical Planarization V (ECS) 176-182 2002年査読有り