原田信介 (Shinsuke Harada) - マイポータル

基本情報

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=S60667168

Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal

Ruito Aiba, Kevin Matsui, Masakazu Baba, Shinsuke Harada, Hiroshi Yano, Noriyuki Iwamuro

IEEE ELECTRON DEVICE LETTERS 41(12) 1810 - 1813 2020年12月
Difference in electron mobility at 4H-SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering

Hirohisa Hirai, Tetsuo Hatakeyama, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Hajime Okumura, Hiroshi Yamaguchi

APPLIED PHYSICS LETTERS 117(4) 2020年7月
Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs

Hiroki Nemoto, Dai Okamoto, Xufang Zhang, Mitsuru Sometani, Mitsuo Okamoto, Tetsuo Hatakeyama, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano

JAPANESE JOURNAL OF APPLIED PHYSICS 59(4) 2020年4月
An experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD

Shuhei Fukunaga, Tsuyoshi Funaki, Shinsuke Harada, Yusuke Kobayashi

IEICE ELECTRONICS EXPRESS 16(17) 2019年9月
Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on (1(1)over-bar00) m-face and (11(2)over-bar0) a-face characterized by Hall effect measurements

Hirohisa Hirai, Tetsuo Hatakeyama, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Hajime Okumura

APPLIED PHYSICS LETTERS 115(13) 2019年9月

超低実効pエピ濃度基板を用いて評価した4H-SiC(0001) MOSFETの反転チャネル電子の散乱要因

染谷満, 細井卓治, 平井悠久, 畠山哲夫, 原田信介, 矢野裕司, 志村考功, 渡部平司, 米澤喜幸, 奥村元

2018年11月査読有り
三次元アトムプローブを用いたSiO2/SiC界面窒素の評価

山田敬一, 藤掛伸二, 岩橋洋平, 原田信介, 矢野, 裕司, 奥村元

第78回応用物理学会秋季学術講演会講演予稿集 13-003 2017年9月